In one embodiment, an integrated circuit assembly includes a substrate comprising electrical connectors on a top side of the substrate and an integrated circuit die coupled to the top side of the substrate. The integrated circuit die includes metal pillars extending from a bottom side of the die facing the top side of the substrate, and the metal pillars of the integrated circuit die are electrically connected to the electrical connectors of the substrate via a liquid metal (e.g., a Gallium-based alloy).

The present invention discloses a high-reliability copper alloy bonding wire for electronic packaging and a preparation method therefor; the bonding wire comprises the following raw material components in percentage by weight: a copper content being 99.75%-99.96%, a tungsten content being 0.01-0.1%, a silver content being 0.01%-0.03%, a scandium content being 0.01%-0.02%, a titanium content being 0.001%-0.03%, a chromium content being 0.001%-0.03%, and an iron content being 0.001%-0.02%. The preparation method therefor comprises: extracting high-purity copper with a purity greater than 99.99%, preparing same as copper alloy ingots, and further preparing same as as-cast copper alloy crude bars, drawing the crude bars to form copper alloy wires, subjecting same to a heat treatment, and then precise drawing, a heat treatment, and cleaning to obtain copper alloy bonding wires of different specifications.

The present invention discloses a high-reliability copper alloy bonding wire for electronic packaging and a preparation method therefor; the bonding wire comprises the following raw material components in percentage by weight: a copper content being 99.75%-99.96%, a tungsten content being 0.01-0.1%, a silver content being 0.01%-0.03%, a scandium content being 0.01%-0.02%, a titanium content being 0.001%-0.03%, a chromium content being 0.001%-0.03%, and an iron content being 0.001%-0.02%. The preparation method therefor comprises: extracting high-purity copper with a purity greater than 99.99%, preparing same as copper alloy ingots, and further preparing same as as-cast copper alloy crude bars, drawing the crude bars to form copper alloy wires, subjecting same to a heat treatment, and then precise drawing, a heat treatment, and cleaning to obtain copper alloy bonding wires of different specifications.

An integrated circuit includes a bottom substrate, a metal layer disposed over the bottom substrate and a hollow metal pillar disposed on the metal layer. The metal layer and the hollow metal pillar are electrically connected.

A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.

An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.