An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A non-elastic material layer is formed above a carrier wafer. An oxide layer is formed above the non-elastic material layer. Multiple integrated circuit die are bonded on the oxide layer using an oxide to oxide bond to form a reconstructed wafer.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A semiconductor substrate has a back side surface and a front side surface. Metallization levels are provide at the front side surface. Capacitive deep trench isolation structures extend completely through the semiconductor substrate from the front side surface to the back side surface. Each capacitive deep trench isolation structure includes a conductive region insulated from the semiconductor substrate by an insulating liner. The conductive regions at first ends of the plurality of capacitive deep trench isolation structures are electrically connected to a first metallization level by electrical contacts. A bonding pad structure is located at the back side surface of the semiconductor substrate in direct physical and electrical connection to the conductive regions at second ends of the capacitive deep trench isolation structures.

A semiconductor substrate has a back side surface and a front side surface. Metallization levels are provide at the front side surface. Capacitive deep trench isolation structures extend completely through the semiconductor substrate from the front side surface to the back side surface. Each capacitive deep trench isolation structure includes a conductive region insulated from the semiconductor substrate by an insulating liner. The conductive regions at first ends of the plurality of capacitive deep trench isolation structures are electrically connected to a first metallization level by electrical contacts. A bonding pad structure is located at the back side surface of the semiconductor substrate in direct physical and electrical connection to the conductive regions at second ends of the capacitive deep trench isolation structures.