The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.

An element that is configured to bond to another element is disclosed. A first element that can include a first plurality of contact pads on a first surface. The first plurality of contact pads includes a first contact pad and a second contact pad that are spaced apart from one another. The first and second contact pads are electrically connected to one another for redundancy. The first element can be prepared for direct bonding. The first element can be bonded to a second element to form a bonded structure. The second element has a second plurality of contact pads on a second surface. At least one of the second plurality of contact pads is bonded and electrically connected to at least one of the first plurality of contact pads.

An element that is configured to bond to another element is disclosed. A first element that can include a first plurality of contact pads on a first surface. The first plurality of contact pads includes a first contact pad and a second contact pad that are spaced apart from one another. The first and second contact pads are electrically connected to one another for redundancy. The first element can be prepared for direct bonding. The first element can be bonded to a second element to form a bonded structure. The second element has a second plurality of contact pads on a second surface. At least one of the second plurality of contact pads is bonded and electrically connected to at least one of the first plurality of contact pads.

A display device including a light emitting element layer, an encapsulation layer disposed on the light emitting element layer, wherein the encapsulation layer includes a hollow polymer structure, and an input sensor disposed on the encapsulation layer.

A semiconductor structure is disclosed, including a substrate, an insulating layer on the substrate, a barrier layer on the insulating layer, a bonding dielectric layer on the barrier layer, and a bonding pad extending through the insulating layer, the barrier layer and the bonding dielectric layer. A top surface of the bonding pad exposed from the bonding dielectric layer for bonding to another bonding pad on another substrate. A liner on a bottom surface of the bonding pad directly contacts the substrate.

A semiconductor structure is disclosed, including a substrate, an insulating layer on the substrate, a barrier layer on the insulating layer, a bonding dielectric layer on the barrier layer, and a bonding pad extending through the insulating layer, the barrier layer and the bonding dielectric layer. A top surface of the bonding pad exposed from the bonding dielectric layer for bonding to another bonding pad on another substrate. A liner on a bottom surface of the bonding pad directly contacts the substrate.

A semiconductor structure is disclosed, including a substrate, an insulating layer on the substrate, a barrier layer on the insulating layer, a bonding dielectric layer on the barrier layer, and a bonding pad extending through the insulating layer, the barrier layer and the bonding dielectric layer. A top surface of the bonding pad exposed from the bonding dielectric layer for bonding to another bonding pad on another substrate. A liner on a bottom surface of the bonding pad directly contacts the substrate.

A semiconductor structure is disclosed, including a substrate, an insulating layer on the substrate, a barrier layer on the insulating layer, a bonding dielectric layer on the barrier layer, and a bonding pad extending through the insulating layer, the barrier layer and the bonding dielectric layer. A top surface of the bonding pad exposed from the bonding dielectric layer for bonding to another bonding pad on another substrate. A liner on a bottom surface of the bonding pad directly contacts the substrate.