Structures and formation methods of a package structure are provided. The package structure includes a semiconductor die and a substrate bonded to the semiconductor die through a first bonding structure and a second bonding structure therebetween. The first bonding structure and the second bonding structure are next to each other and the second bonding structure is wider than the first bonding structure. The first bonding structure has a first under bump metallurgy (UBM) structure and a first solder bump thereon, and the second bonding structure has a second UBM structure and a second solder bump thereon. The second UBM structure has a maximum width larger than that of the first UBM structure, and the second solder bump has a maximum width larger than that of the first solder bump.

Structures and formation methods of a package structure are provided. The package structure includes a semiconductor die and a substrate bonded to the semiconductor die through a first bonding structure and a second bonding structure therebetween. The first bonding structure and the second bonding structure are next to each other and the second bonding structure is wider than the first bonding structure. The first bonding structure has a first under bump metallurgy (UBM) structure and a first solder bump thereon, and the second bonding structure has a second UBM structure and a second solder bump thereon. The second UBM structure has a maximum width larger than that of the first UBM structure, and the second solder bump has a maximum width larger than that of the first solder bump.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

A chip package may include a first polymer layer and a first semiconductor chip in the first polymer layer. The first semiconductor chip may include a first semiconductor device and a first semiconductor substrate supporting the first semiconductor device. The first semiconductor chip may also have a first contact pad coupled to the first semiconductor device. The first semiconductor chip may further include a first conductive interconnect on the first contact pad. The chip package may also include a second polymer layer on the first polymer layer and across an edge of the first semiconductor chip. The chip package may further include a first conductive layer in the second polymer layer and directly on a surface of the first conductive interconnect, and across the edge of the first semiconductor chip.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

An electronic component includes a base insulative layer having first and second surfaces; an electronic device having first and second surfaces; at least one I/O contact located on the first surface of the electronic device; an adhesive layer disposed between the first surface of the electronic device and the second surface of the base insulative layer; a first metal layer disposed on the I/O contact; and a removable layer disposed between the first surface of the electronic device and the second surface of the base insulative layer, and located adjacent to the first metal layer. The base insulative layer secures to the electronic device through the first metal layer and removable layer. The first metal layer and removable layer can release the base insulative layer from the electronic device when the first metal layer and removable layer are exposed to a temperature higher than their softening points or melting points.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.