A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

A method of fabricating an under-bump metallurgy (UBM) structure that is free of gold processing includes forming a titanium layer on top of a far back of line (FBEOL) of a semiconductor. A first copper layer is formed on top of the titanium layer. A photoresist (PR) layer is formed on top of the first copper layer between traces of the FBEOL to provide a cavity to the FBEOL traces. A top copper layer is formed on top of the first copper layer. A protective surface layer (PSL) is formed on top of the top copper layer.

For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method for interconnecting two conductors includes creating a first nickel layer on a first conductor of an electrical component, producing a first non-gold protective layer on the first nickel layer, the first non-gold protective layer being configured to prevent the first nickel layer from oxidizing, creating a second nickel layer on a second conductor, producing a second non-gold protective layer on the second nickel layer, the second non-gold protective layer being configured to prevent the second nickel layer from oxidizing, and interconnecting the first and second nickel layers using a solder layer that interfaces with the first and second nickel layers between the first and second conductors.

A method for interconnecting two conductors includes creating a first nickel layer on a first conductor of an electrical component, producing a first non-gold protective layer on the first nickel layer, the first non-gold protective layer being configured to prevent the first nickel layer from oxidizing, creating a second nickel layer on a second conductor, producing a second non-gold protective layer on the second nickel layer, the second non-gold protective layer being configured to prevent the second nickel layer from oxidizing, and interconnecting the first and second nickel layers using a solder layer that interfaces with the first and second nickel layers between the first and second conductors.

A light emitting device includes a light emitting element, a molded member, and a sealing member. The light emitting element is arranged on or above the molded member. The sealing member covers the light emitting element. The sealing member contains a phosphor, and a filler material. The phosphor can be excited by light of the light emitting element, and emit luminescent radiation. The filler material contains neodymium hydroxide, neodymium aluminate or neodymium silicate. The filler material absorbs a part of the spectrum of the mixed light of the light emitting element and the phosphor so that the other parts of the spectrum of this mixed light are extracted from the light emitting device.

Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.