A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.

A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a first chip structure over the wiring substrate. The chip package structure includes a heat-spreading lid over the wiring substrate and covering the first chip structure. The heat-spreading lid includes a ring structure and a top plate. The ring structure surrounds the first chip structure. The top plate covers the ring structure and the first chip structure. The first chip structure has a first sidewall and a second sidewall opposite to the first sidewall, a first distance between the first sidewall and the ring structure is less than a second distance between the second sidewall and the ring structure, the top plate has a first opening, the first opening has a first inner wall and a second inner wall facing each other.

A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a first chip structure over the wiring substrate. The chip package structure includes a heat-spreading lid over the wiring substrate and covering the first chip structure. The heat-spreading lid includes a ring structure and a top plate. The ring structure surrounds the first chip structure. The top plate covers the ring structure and the first chip structure. The first chip structure has a first sidewall and a second sidewall opposite to the first sidewall, a first distance between the first sidewall and the ring structure is less than a second distance between the second sidewall and the ring structure, the top plate has a first opening, the first opening has a first inner wall and a second inner wall facing each other.

A semiconductor package includes a semiconductor chip, a lower redistribution layer disposed under the semiconductor chip, the lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns, and a plurality of lower conductive vias, a lower passivation layer disposed under the lower redistribution layer and provided with a recess at a bottom surface of the lower passivation layer, an under bump metallization (UBM) pad disposed in the first recess, a UBM protective layer disposed in the first recess and connected to the lower conductive vias while covering a top surface and opposite side surfaces of the UBM pad, and an outer connecting terminal connected to a bottom surface of the UBM pad. The bottom surface of the UBM pad is positioned at a first depth from the bottom surface of the lower passivation layer.

A semiconductor package includes a semiconductor chip, a lower redistribution layer disposed under the semiconductor chip, the lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns, and a plurality of lower conductive vias, a lower passivation layer disposed under the lower redistribution layer and provided with a recess at a bottom surface of the lower passivation layer, an under bump metallization (UBM) pad disposed in the first recess, a UBM protective layer disposed in the first recess and connected to the lower conductive vias while covering a top surface and opposite side surfaces of the UBM pad, and an outer connecting terminal connected to a bottom surface of the UBM pad. The bottom surface of the UBM pad is positioned at a first depth from the bottom surface of the lower passivation layer.

The present application discloses a method for fabricating a semiconductor device with a connection structure. The method includes providing a first semiconductor structure comprising a plurality of first conductive features adjacent to a top surface of the first semiconductor structure; forming a connection structure comprising a connection insulating layer on the top surface of the first semiconductor structure, a connection layer in the connection insulating layer, and a plurality of first porous interlayers on the plurality of first conductive features and in the connection insulating layer; and forming a second semiconductor structure comprising a plurality of second conductive features on the plurality of first porous interlayers.

The present application discloses a method for fabricating a semiconductor device with a connection structure. The method includes providing a first semiconductor structure comprising a plurality of first conductive features adjacent to a top surface of the first semiconductor structure; forming a connection structure comprising a connection insulating layer on the top surface of the first semiconductor structure, a connection layer in the connection insulating layer, and a plurality of first porous interlayers on the plurality of first conductive features and in the connection insulating layer; and forming a second semiconductor structure comprising a plurality of second conductive features on the plurality of first porous interlayers.

The purpose of the present invention is to provide a photosensitive resin composition that yields a cured film having exceptional heat resistance, elongation, chemical resistance, permittivity, and dielectric tangent while being curable under low-temperature heat treatments, the percentage of film remaining after development being exceptional. To solve the above problem, the photosensitive resin composition of the present invention has the following configuration. Specifically, a photosensitive resin composition that contains a resin (A) and a photopolymerization initiator (B), said resin (A): containing one or more structural units selected from the group consisting of specific structural units represented by formula (1), formula (3), and formula (5); and also containing one or more structural units selected from the group consisting of structural units represented by formula (2), formula (4), and formula (6).

A via for semiconductor devices is disclosed. Implementations of vias for semiconductor devices may include: a semiconductor substrate that includes a first side; a via extending from the first side of the semiconductor substrate to a pad; a polymer layer coupled along an entire sidewall of the via, the polymer layer in direct contact with the pad; and a metal layer directly coupled over the polymer layer and directly coupled with the pad.

A via for semiconductor devices is disclosed. Implementations of vias for semiconductor devices may include: a semiconductor substrate that includes a first side; a via extending from the first side of the semiconductor substrate to a pad; a polymer layer coupled along an entire sidewall of the via, the polymer layer in direct contact with the pad; and a metal layer directly coupled over the polymer layer and directly coupled with the pad.