Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.

Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.

A converter includes a plurality of active circuitry elements over a substrate. The converter further includes a passivation structure over the plurality of active circuitry elements, the passivation structure having at least one opening that is configured to expose at least one electrical pad of each active circuitry element. The converter further includes a plurality of passive electrical components over the passivation structure, wherein each passive electrical component is selectively connectable with at least one other passive electrical component, and a first side of each passive electrical component is electrically coupled to an electrical pad of each of at least two active circuitry elements. The converter further includes a plurality of electrical connection structures, wherein a first electrical connection structure electrically couples an electrical pad of a first active circuitry element to a corresponding passive electrical component, and the first electrical connection structure is completely within the passivation structure.