A converter includes a plurality of active circuitry elements over a substrate. The converter further includes a passivation structure over the plurality of active circuitry elements, the passivation structure having at least one opening that is configured to expose at least one electrical pad of each active circuitry element. The converter further includes a plurality of passive electrical components over the passivation structure, wherein each passive electrical component is selectively connectable with at least one other passive electrical component, and a first side of each passive electrical component is electrically coupled to an electrical pad of each of at least two active circuitry elements. The converter further includes a plurality of electrical connection structures, wherein a first electrical connection structure electrically couples an electrical pad of a first active circuitry element to a corresponding passive electrical component, and the first electrical connection structure is completely within the passivation structure.

Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.