A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive structure comprising a first portion overlying the base structure and second portions vertically extending from the first portion and into the base structure, a stack structure overlying the doped semiconductive structure, cell pillar structures vertically extending through the stack structure and to the doped semiconductive structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The carrier structure and the second portions of the doped semiconductive structure are removed. The first portion of the doped semiconductive structure is then patterned to form at least one source structure coupled to the cell pillar structures. Devices and systems are also described.

A bonding structure and a method for manufacturing the same. The bonding structure includes a wafer stack formed by multiple wafers that are bonded in sequence, where: chip stacks are arranged in an array in the wafer stack, and each of the chip stacks includes multiple layers of chips that are bonded in sequence; electrical vertical interconnections are formed in each of the chip stacks; and the electrical vertical interconnections include a thorough vertical interconnection that is electrically connected to an interconnection layer in each of the multiple layers, and a partial vertical interconnection that is electrically connected to the interconnection layer in each of a part of the multiple layers and/or a single vertical interconnection that is electrically connected to the interconnection layer in a single layer of the multiple layers.

A method is provided. A bottom tier package structure is bonded to a support substrate through a first bonding structure, wherein the bottom tier package structure includes a first semiconductor die encapsulated by a first insulating encapsulation, and the first bonding structure includes stacked first dielectric layers and at least one stacked first conductive features penetrating through the stacked first dielectric layers. The support substrate is placed on a grounded stage such that the first semiconductor die is grounded through the at least one first stacked conductive features, the support substrate and the grounded stage. A second semiconductor die is bonded to the bottom tier package structure through a second bonding structure, wherein the second bonding structure includes stacked second dielectric layers and at least one stacked second conductive features penetrating through the stacked second dielectric layers. The second semiconductor die is encapsulated with a second insulating encapsulation.

A method is provided. A bottom tier package structure is bonded to a support substrate through a first bonding structure, wherein the bottom tier package structure includes a first semiconductor die encapsulated by a first insulating encapsulation, and the first bonding structure includes stacked first dielectric layers and at least one stacked first conductive features penetrating through the stacked first dielectric layers. The support substrate is placed on a grounded stage such that the first semiconductor die is grounded through the at least one first stacked conductive features, the support substrate and the grounded stage. A second semiconductor die is bonded to the bottom tier package structure through a second bonding structure, wherein the second bonding structure includes stacked second dielectric layers and at least one stacked second conductive features penetrating through the stacked second dielectric layers. The second semiconductor die is encapsulated with a second insulating encapsulation.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure to are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. Microelectronic devices and electronic systems are also described.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure to are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. Microelectronic devices and electronic systems are also described.

A method of manufacturing a package structure is provided. The method of manufacturing a package structure comprises receiving a first semiconductor structure and a second semiconductor structure; forming an isolation layer on each semiconductor structure; forming at least one supporting structure and at least one pad trench in the isolation layer; filling the pad trench with electrically conductive material; plariarizing the isolation layer and the electrically conductive material to form bonding pads in a bonding layer on each semiconductor structure; and bonding the semiconductor structures.

A method of manufacturing a package structure is provided. The method of manufacturing a package structure comprises receiving a first semiconductor structure and a second semiconductor structure; forming an isolation layer on each semiconductor structure; forming at least one supporting structure and at least one pad trench in the isolation layer; filling the pad trench with electrically conductive material; plariarizing the isolation layer and the electrically conductive material to form bonding pads in a bonding layer on each semiconductor structure; and bonding the semiconductor structures.

A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.

A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.