This tin or tin-alloy plating liquid contains (A) a soluble salt including at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid, or a salt thereof; (C) a surfactant; (D) a leveling agent; and (E) an additive, wherein the surfactant is a compound (C1) represented by Formula (1) and/or a compound (C2) represented by Formula (2).

##STR00001##

In Formulas (1) and (2), R is an alkyl group having 7 to 13 carbon atoms, m is 5 to 11, n is 1 to 3, and m and n are different from each other.

This tin or tin-alloy plating liquid contains (A) a soluble salt including at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid, or a salt thereof; (C) a surfactant; (D) a leveling agent; and (E) an additive, wherein the surfactant is a compound (C1) represented by Formula (1) and/or a compound (C2) represented by Formula (2).

##STR00001##

In Formulas (1) and (2), R is an alkyl group having 7 to 13 carbon atoms, m is 5 to 11, n is 1 to 3, and m and n are different from each other.

A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.

A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180 C. to 350 C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180 C. to 350 C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.