A problem is to provide a sheet which is such that a sintered body produced following sintering has a small amount of remaining organic substances. Solution means relate to a sheet comprising a pre-sintering layer. The pre-sintering layer comprises polycarbonate.

A problem is to provide a sheet which is such that a sintered body produced following sintering has a small amount of remaining organic substances. Solution means relate to a sheet comprising a pre-sintering layer. The pre-sintering layer comprises polycarbonate.

In a semiconductor device according to an embodiment, a first connection wiring layer and a second connection wiring layer are bonded such that a first surface and a second surface face each other and a first electrode and a second electrode are in contact with each other, wherein the first electrode includes a first barrier metal film provided in a first trench and containing Ti, and a first conductive film provided in the first trench via the first barrier metal film and containing polycrystalline Cu, the second electrode includes a second barrier metal film provided in a second trench and containing Ti, and a second conductive film provided in the second trench via the second barrier metal film and containing polycrystalline Cu, and Ti and O are present on a bonding surface between the first electrode and the second electrode.

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/ C.

An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/ C.

A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of A1<B1<A1+200 seconds and a relationship of A1<2000 seconds.

A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of A1<B1<A1+200 seconds and a relationship of A1<2000 seconds.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.