A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

Wafer level package structures and packaging methods are provided. An exemplary method includes providing a device wafer having a first front surface and a first back surface opposing the first front surface, wherein at least one first chip is integrated in the first front surface; forming a first oxide layer on the first front surface of the device wafer; providing at least one second chip having a to-be-bonded surface; forming a second oxide layer on the to-be-bonded surface of each second chip; providing a carrier wafer; temporally bonding a surface of the second chip opposing the second oxide layer to the carrier wafer; forming an encapsulation layer on the carrier wafer between adjacent second chips of the at least one second; and bonding the device wafer and the second chip by bonding the first oxide layer with the second oxide layer by a low-temperature fusion bonding process.

A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.