In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.

Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.

A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.

A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.

A resin composition that has both excellent flux activity and high insulation reliability, that possesses good storage stability, and that further has flexibility with good operability upon being used as a laminate is provided. The resin composition contains a chelating flux agent (A), a thermal radical polymerization initiator (B) and a radical polymerizable compound (C).

A resin composition that has both excellent flux activity and high insulation reliability, that possesses good storage stability, and that further has flexibility with good operability upon being used as a laminate is provided. The resin composition contains a chelating flux agent (A), a thermal radical polymerization initiator (B) and a radical polymerizable compound (C).

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.