A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the deicing tape; the die bonding layer including a matrix resin, a thiol-group-containing compound, and conductive particles.

A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the deicing tape; the die bonding layer including a matrix resin, a thiol-group-containing compound, and conductive particles.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

Provided in the present invention is a thermosetting sheet including a thermosetting resin, a thermoplastic resin, a volatile component, and conductive particles. The thermosetting sheet has an arithmetic average roughness Ra of 0.1 μm or more and 1.2 μm or less that is measured in a state before being cured.

Provided in the present invention is a thermosetting sheet including a thermosetting resin, a thermoplastic resin, a volatile component, and conductive particles. The thermosetting sheet has an arithmetic average roughness Ra of 0.1 μm or more and 1.2 μm or less that is measured in a state before being cured.

Compounds including two or more aromatic rings to which a fluorine-substituted arylcarbonyloxy group is directly bonded are useful as epoxy resin curing agents.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

In some embodiments, the present disclosure relates to a method including forming an interconnect structure over a substrate. A bond pad may be coupled to the interconnect structure, and a polymeric material may be deposited over the bond pad. In some embodiments, the method further includes performing a patterning process to remove a portion of the polymeric material to form an opening in the polymeric material. The opening directly overlies and exposes the bond pad. Further, the method includes a first cleaning process. The polymeric material is cured to form a polymeric protection layer, and a second cleaning process is performed.