In some embodiments, the present disclosure relates to a method including forming an interconnect structure over a substrate. A bond pad may be coupled to the interconnect structure, and a polymeric material may be deposited over the bond pad. In some embodiments, the method further includes performing a patterning process to remove a portion of the polymeric material to form an opening in the polymeric material. The opening directly overlies and exposes the bond pad. Further, the method includes a first cleaning process. The polymeric material is cured to form a polymeric protection layer, and a second cleaning process is performed.

A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

A semiconductor package includes a circuit board mounting a first semiconductor chip and a second semiconductor chip laterally separated by an intermediate space, an underfill including an extended portion protruding upward into the intermediate space, a surface modification layer on opposing side surfaces of the first semiconductor chip and the second semiconductor chip, wherein wettability of the underfill with respect to the surface modification layer is less than wettability of the underfill with respect to the side surfaces of the first semiconductor chip and the second semiconductor chip, and a molding member on the upper surface of the circuit board, covering an upper surface of the extended portion of the underfill, and surrounding the first semiconductor chip and the second semiconductor chip.

A semiconductor package includes a circuit board mounting a first semiconductor chip and a second semiconductor chip laterally separated by an intermediate space, an underfill including an extended portion protruding upward into the intermediate space, a surface modification layer on opposing side surfaces of the first semiconductor chip and the second semiconductor chip, wherein wettability of the underfill with respect to the surface modification layer is less than wettability of the underfill with respect to the side surfaces of the first semiconductor chip and the second semiconductor chip, and a molding member on the upper surface of the circuit board, covering an upper surface of the extended portion of the underfill, and surrounding the first semiconductor chip and the second semiconductor chip.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.