An object of the present invention is to achieve both securing an insulation distance and securing a chip mounting area in a non-insulated power module. A non-insulated power module includes a plurality of die pads, a plurality of semiconductor chips mounted on upper surfaces of the plurality of die pads, and a package sealing the semiconductor chips, in which lower surfaces of the plurality of die pads are exposed from a lower surface of the package, on the lower surface of the package, first grooves are formed in areas between the plurality of die pads, and the plurality of die pads have a trapezoidal cross-sectional shape in the thickness direction, in which an area of an upper surface is larger than an area of the lower surface.

A prepreg is used to fabricate a semiconductor package including a chip and a substrate to mount the chip thereon. The prepreg is in a semi-cured state. The substrate includes a cured product of the prepreg. The chip has: a first chip surface located opposite from the substrate; and a second chip surface located opposite from the first chip surface. The prepreg satisfies the relational expression: 0.9X.sub.2/X.sub.11.0 (I), where X.sub.1 is a coefficient of thermal expansion of the first chip surface of the chip before the chip is mounted on the substrate, and X.sub.2 is a coefficient of thermal expansion of the first chip surface of the chip after the chip has been mounted on the substrate.

A semiconductor device includes a substrate, a die and multiple conductive traces. The die is mounted on the substrate. The conductive traces are routed on the substrate and connected to the die. The conductive traces at least include a plurality of first conductive traces and a plurality of second conductive traces. The second conductive traces are coupled to a predetermined voltage for providing a shielding pattern. The first conductive traces and the second conductive traces are disposed on the substrate in a substantially interlaced pattern.

A display device includes: a display panel; a driver integrated circuit (IC) including a first surface electrically connected to the display panel and a second surface opposing the first surface and electrically connected to the first surface; and a connecting structure including a first side portion electrically connected to the second surface of the driver IC, and a second side portion electrically connected to an external device.

A semiconductor package includes a die and a patterned conductive layer electrically connected to the die. The patterned conductive layer includes a connection pad and a trace. The semiconductor package further includes an encapsulation layer encapsulating the die and the patterned conductive layer. The semiconductor package further includes an electrical connection element disposed on the connection pad and a protection layer including a sidewall portion surrounding the electrical connection element.

An electronic device includes a main substrate, a semiconductor package structure and at least one heat pipe. The semiconductor package structure is electrically connected to the main substrate, and includes a die mounting portion, a semiconductor die and a cover structure. The semiconductor die is disposed on the die mounting portion. The cover structure covers the semiconductor die. The heat pipe contacts the cover structure for dissipating a heat generated by the semiconductor die.

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a multi-chip module (MCM) is disclosed. The MCM includes a common substrate and a first integrated circuit (IC) chip disposed on the common substrate. The first IC chip includes a first memory interface. A second IC chip is disposed on the common substrate and includes a second memory interface. A first memory device is disposed on the common substrate and includes memory and a first port coupled to the memory. The first port is configured for communicating with the first memory interface of the first IC chip. A second port is coupled to the memory and communicates with the second memory interface of the second IC chip. In-memory processing circuitry is coupled to the memory and controls transactions between the first memory device and the first and second IC chips.

A power module includes a recessed base plate having a hollow portion, at least one insulating substrate disposed in the hollow portion of the base plate, at least one semiconductor chip mounted on the at least one insulating substrate, and sealing resin for sealing a surface of the hollow portion side of the base plate, the at least one insulating substrate, and the at least one semiconductor chip.

A semiconductor device includes a substrate, a die and multiple conductive traces. The die is mounted on the substrate. The conductive traces are routed on the substrate and connected to the die. The conductive traces at least include a plurality of first conductive traces and a plurality of second conductive traces. The second conductive traces are coupled to a predetermined voltage for providing a shielding pattern. The first conductive traces and the second conductive traces are disposed on the substrate in a substantially interlaced pattern.

A semiconductor package includes a die and a patterned conductive layer electrically connected to the die. The patterned conductive layer includes a connection pad and a trace. The semiconductor package further includes an encapsulation layer encapsulating the die and the patterned conductive layer. The semiconductor package further includes an electrical connection element disposed on the connection pad and a protection layer including a sidewall portion surrounding the electrical connection element.