The present disclosure provides systems for applying a compression load on at least part of an application specific integrated circuit (“ASIC”) ball grid array (“BGA”) package during the rework or secondary reflow process. The compression-loading assembly may include a top plate and a compression plate. The compression plate may exert a compression load on at least part of the ASIC using one or more compression mechanisms. The compression mechanisms may each include a bolt and a spring. The bolt may releasably couple the top plate to the compression plate and allow for adjustments to the compression load. The spring may be positioned on the bolt between the top plate and the compression plate and, therefore, may exert a force in a direction away from the top plate and toward the compression plate. The compression load may retain the solder joint and may prevent the solder separation defect during the reflow process.

A package includes a base substrate, a frame, and a lead frame. The base substrate is made of metal, and includes a mounting area on which a semiconductor element is to be mounted and a frame area surrounding the mounting area. The frame is provided on the frame area of the base substrate, and includes a first surface facing the frame area and a second surface opposite to the first surface. The lead frame is joined to the second surface of the frame. The frame includes a plurality of dielectric layers having a layered structure and an element connector to be electrically connected to the semiconductor element. The plurality of dielectric layers include a first dielectric layer having first permittivity and a second dielectric layer having second permittivity different from the first permittivity.

The present disclosure provides systems for applying a compression load on at least part of an application specific integrated circuit (“ASIC”) ball grid array (“BGA”) package during the rework or secondary reflow process. The compression-loading assembly may include a top plate and a compression plate. The compression plate may exert a compression load on at least part of the ASIC using one or more compression mechanisms. The compression mechanisms may each include a bolt and a spring. The bolt may releasably couple the top plate to the compression plate and allow for adjustments to the compression load. The spring may be positioned on the bolt between the top plate and the compression plate and, therefore, may exert a force in a direction away from the top plate and toward the compression plate. The compression load may retain the solder joint and may prevent the solder separation defect during the reflow process.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.

A semiconductor arrangement includes a controllable semiconductor element having an active region, and bonding wires arranged in parallel to each other in a first horizontal direction. The active region has a first length in the first horizontal direction and a first width in a second horizontal direction perpendicular to the first horizontal direction. Each bonding wire is electrically and mechanically coupled to the controllable semiconductor element by a first number of bond connections arranged above the active region. A first bond connection of each bonding wire is arranged at a first distance from a first edge of the active region. A second bond connection of each bonding wire is arranged at a second distance from a second edge of the active region opposite the first edge. The first and second distances are both less than the first length divided by twice the first number of bond connections.

A semiconductor device of embodiments includes a first semiconductor chip; a metal plate having a first plane and a second plane facing the first plane and including a first ceramic plate provided between the first plane and the second plane; and a first insulating board provided between the first semiconductor chip and the metal plate and facing the first plane, in which the first ceramic plate does not exist between the first semiconductor chip and the second plane.

A semiconductor package that effectively controls heat generated from a semiconductor chip is provided. A semiconductor device with improved product reliability and performance is provided. A semiconductor package comprises a substrate including a first surface and a second surface facing each other, a first semiconductor chip and a second semiconductor chip disposed on the first surface of the substrate, a first heat spreader formed on the first semiconductor chip and the second semiconductor chip, and a second heat spreader which protrudes from the first heat spreader and covers an upper part of the first semiconductor chip, wherein the first semiconductor chip includes a first side wall extending in a first direction, the second semiconductor chip includes a second side wall extending in the first direction and facing the first side wall of the first semiconductor chip in a second direction intersecting the first direction, and an area of the second heat spreader at a boundary between the first heat spreader and the second heat spreader is smaller than or equal to an area of an upper surface of the first semiconductor chip.

A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

A method includes: providing a package body including a mounting part having a chip mounting region for mounting a semiconductor chip, a side wall part having a first sealing surface continuously provided over an entire perimeter of the mounting part, surrounding the chip mounting region and provided on the mounting part, a first recess provided on the first sealing surface, and a first solder outflow prevention part continuously provided on the first sealing surface and positioned closer to the chip mounting region side than the first recess; providing a cap having a second sealing surface facing the first sealing surface; providing a ball solder made of an alloy of gold and tin as principal ingredients; placing the ball solder in the first recess; placing the cap on the ball solder; and melting once and then solidifying the ball solder to bond the first sealing surface and the second sealing surface.

An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.