An optoelectronic device and a method for producing an optoelectronic device are disclosed. In an embodiment a method includes arranging an optoelectronic semiconductor chip with its top side towards a surface of a carrier, forming a recess at the surface of the carrier such that the recess surrounds the optoelectronic semiconductor chip, arranging a mold compound in the recess and above the surface of the carrier such that the optoelectronic semiconductor chip is embedded into the mold compound, wherein a bottom side of the optoelectronic semiconductor chip remains at least partially not covered by the mold compound, removing the carrier and arranging a wavelength-converting material above the surface of the carrier before arranging the optoelectronic semiconductor chip, wherein the wavelength-converting material is perforated while forming the recess.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

An optical component package includes a main substrate including a plurality of metal bodies, and a vertical insulation part provided between the metal bodies; a cavity provided in an upper surface of the main substrate; a sub-substrate provided in the cavity of the main substrate, the sub-substrate including an insulating body, a plurality of via holes vertically passing through the insulating body and filled with a metal material being electrically connected to each of the metal bodies, and a plurality of metal pads mounted on the insulating body and electrically connected to the plurality of via holes; a plurality of optical components mounted on the plurality of metal pads and electrically connected to the plurality of metal pads; and a light transmitting member provided above the main substrate.

A three-dimensional optoelectronic device package is disclosed. The three-dimensional optoelectronic device package comprises a first board having at least one surface on which a plurality of optoelectronic devices is disposed, and a second board having at least one surface on which a plurality of optoelectronic devices is disposed. A side of the second board is attached to the surface of the first board on which a plurality of optoelectronic devices is disposed to form an angle between the surface of the first board on which a plurality of optoelectronic devices is disposed and the surface of the second board on which a plurality of optoelectronic devices is disposed. A method for manufacturing a three-dimensional optoelectronic device package is also disclosed.

Disclosed is a method for manufacturing a set of light emitters each including a light emitting structure and an electrical contact, the method including the steps of:—providing a wafer carrying a set of light emitting structures, each emitting structure being configured to emit a first radiation when an electric current flows through the emitting structure, and—manufacturing, for each emitting structure, an electric contact, the contact being electrically insulated from each other. The manufacturing includes:—forming a first set of at least two first contacts and at least one conductor, the contact of the first set being electrically connected to each other first contact of the one or the conductor,—injecting, for each contact belonging to the first set, a electric current through the contact and the corresponding emitting structure, and—observing a radiation emitted in response to the injection.

A transfer printing method and a transfer printing apparatus. The transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of positions of the plurality of devices on the transfer substrate; obtaining second position information of corresponding positions, on a target substrate, of devices to be transferred; comparing the first position information with the second position information to obtain first target position information recording a first transfer position; and aligning the transfer substrate with the target substrate and performing a site-designated laser irradiation on at least part of devices on the transfer substrate corresponding to the first transfer position, simultaneously, according to the first target position information, so as to transfer the at least part of the devices from the transfer substrate to the target substrate.

An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

An array of light emitting devices is mounted on a support surface with the transparent growth substrate (e.g., sapphire) facing up. A photoresist layer is then deposited over the top surface of the growth substrate, followed by depositing a reflective material over the top and side surfaces of the light emitting devices to encapsulate the light emitting devices. The top surfaces of the light emitting devices are then ground down to remove the reflective material over the top surface of the photoresist. The photoresist is then dissolved to leave a cavity over the growth substrate having reflective walls. The cavity is then filled with a phosphor. The phosphor-converted light emitting devices are then singulated to form packaged light emitting devices. All side light is reflected back into the light emitting device by the reflective material and eventually exits the light emitting device toward the phosphor. The packaged light emitting devices, when energized, appear as a white dot with no side emission (e.g., no blue halo).

To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.

A cap is mounted to a support substrate, the cap including a cap body and an optical shutter. The cap and support substrate define a housing. An electronic chip is disposed in the housing above the support substrate. A face of the electronic chip supports an optical device that is optically coupled with the optical shutter. The cap body is thermally conductive. Within the housing, a thermally conductive linking structure is coupled in a thermally conductive manner between the cap body and the electronic chip. The thermally conductive linking structure surrounds the electronic chip. A thermal interface material fills a portion of the housing between the thermally conductive linking structure and the cap body.