A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

A light emitting device includes a base, a first external terminal, a second external terminal, a plurality of wirings respectively electrically connecting the first external terminal and the second external terminal, and a plurality of light emitting elements each electrically connected to a corresponding one of the wirings. The wirings include a first wiring connecting the first external terminal and the second external terminal at a smallest distance, a second wiring longer than the first wiring, and a third wiring longer than the second wiring. The first, second, and third wirings have a substantially equal electric resistance. At least two of the first, second and third wirings are each provided with at least two of the light emitting elements with an average width in an intermediate region between adjacent ones of the light emitting elements being smaller than an average width in a region other than the intermediate region.

The present invention relates to an embedded printed circuit board including: an insulation substrate including a cavity; a sensor device disposed on the cavity; an insulating layer disposed on the insulation substrate, having an opening part exposing the sensor device; and a pad part disposed on the lower surface of the opening part exposing the sensor device.

The light emitting device includes a light emitting element having an electrode-formed surface on which electrode posts are formed; a covering member covering the electrode-formed surface and lateral surfaces of the light emitting element while forming an exposure portion of each of the electrode posts which are exposed from the covering member; a pair of electrode layers provided on a surface of the covering member and electrically connected to the exposed portions of the electrode posts; and a pair of electrode terminals which are respectively electrically connected to the electrode layers, having a surface area larger than a surface area of the electrode posts, and having an outer edge positioned at an end portion of the covering member; and an insulating member provided between the pair of the electrode terminals while being in contact with lateral surfaces of the pair of electrode terminals.

To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.

The lighting device disclosed in the embodiment of the invention includes: a substrate including a recess; a light source on the substrate; a resin layer on the substrate; and a wavelength conversion layer on the resin layer. A portion of the resin layer is disposed in a recess of the substrate. A portion of the wavelength conversion layer is disposed on the recess of the substrate. The outermost surface of the portion of the resin layer disposed in the recess of the substrate may be located outside the inner surface of the wavelength conversion layer.

A light emitting device includes a semiconductor light emitting element and a package that seals the semiconductor light emitting element. The package includes a base having a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and a second upper surface region surrounding the first upper surface region in a plan view viewed in a direction normal to the first upper surface region. The package further includes a cover bonded to the base, an inner metal layer disposed on the second upper surface region of the base, an outer metal layer extending along the outer edge of the inner metal layer, and a slit part on the second upper surface region between the inner metal layer and the outer metal layer. In the plan view, the inner edge of the inner metal layer is positioned inward of the outer edge of the cover. In the plan view, at least a portion of the outer edge of the outer metal layer is positioned outward of the outer edge of the cover. The cover is bonded to the base via a bonding material disposed on the inner metal layer.

Micro light-emitting diode displays having hybrid inorganic-organic pixel structures and methods of fabricating micro light-emitting diode displays having hybrid inorganic-organic pixel structures are described. In an example, a micro light emitting diode pixel structure includes a plurality of inorganic micro light emitting diode devices in a dielectric layer. An organic light emitting diode device is in the dielectric layer and laterally adjacent to the plurality of inorganic micro light emitting diode devices. A transparent conducting oxide layer is above the dielectric layer and can act as a common cathode electrode for the inorganic and organic light emitting diodes.