To provide a flexible, highly reliable, and sheet-like power storage device. The power storage device including a flexible substrate; a positive electrode lead and a negative electrode lead over the flexible substrate; and a plurality of power storage elements over the flexible substrate. The plurality of power storage elements each includes a stack body including a sheet-like positive electrode; a sheet-like negative electrode; and an electrolyte therebetween in an exterior body. An edge portion of the sheet-like positive electrode which extends to the outside of the exterior body is electrically connected to the positive electrode lead through a positive electrode tab provided for the exterior body. An edge portion of the sheet-like negative electrode which extends to the outside of the exterior body is electrically connected to the negative electrode lead through a negative electrode tab provided for the exterior body.

Details an invention of an electrical device consisting of a three-dimensional structure comprising an unlimited number of interpenetrating elements and the use of the structure in the fabrication methods for electrical, electro-optical and electro-chemical devices.

The disclosed technology generally relates to thin film-based energy storage devices, and more particularly to printed thin film-based energy storage devices. The thin film-based energy storage device includes a first current collector layer and a second current collector layer over an electrically insulating substrate and adjacently disposed in a lateral direction. The thin film-based energy storage device additionally includes a first electrode layer of a first type over the first current collector layer and a second electrode layer of a second type over the second current collector layer. A separator separates the first electrode layer and the second electrode layer. One or more of the first current collector layer, the first electrode layer, the separator, the second electrode layer and the second current collector layer are printed layers.

A method for producing miniaturized electronic components is provided, where the miniaturized electronic components are obtained as singularized parts of a sheet-like glass which has structures applied thereon, in particular at least one layer. The method includes the steps of: providing a sheet-like glass toughened at least during a time period, as a substrate material; applying structures onto the substrate, in particular in the form of a sequence of coating processes and by processes for patterning of layers, so that at least portions of the substrate carry structures while other portions of the substrate remain free; subjecting the substrate carrying the structures to a thermal load; and singularizing so that the portions of the substrate carrying structures are obtained in singularized form. A miniaturized electronic component produced in this manner is also provided.

A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. The substrate is at least partly embedded in the encapsulant. An anode electrode is electrically connected to the battery anode semiconductor material and is disposed over the second face of the encapsulant. A cathode electrode is electrically connected to the battery cathode material and is disposed over the first face of the encapsulant.

The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

The present disclosure relates generally to a defibrillator assembly comprising a defibrillator having a first operating mode for delivering a high energy output to a patient and a second operating mode for monitoring the patient, a first battery unit operably coupled to the defibrillator, and a second battery unit operably coupled to the defibrillator. One of the first battery unit and the second battery unit provides power to the defibrillator during the second operating mode. Both the first battery unit and the second battery unit provide power to the defibrillator during the first operating mode.

An electrode, in particular for micro-batteries, produced in a plurality of layers with intermediate steps of masking a first layer leaving some parts of the latter exposed in order next to produce a removal of material eliminating defects. After removal of the masking layer, the second layer can be formed. Other layers can then follow in the same way.

A method of fabricating a porous wafer battery comprises the steps of providing a silicon wafer comprising a plurality of pores; applying a first metallization process; applying a passivation process; applying solder balls, aligning the silicon wafer with a substance, and applying a solder reflow process. A method using a porous wafer battery comprises the steps of connecting the porous wafer battery to a plurality of sensors, a plurality of switches, and a battery management system; monitoring temperature, resistance, or current; and electrically disconnecting a non-properly functioning pore.

An anodic member, an electrochemical device having an anodic member, and a method for manufacturing an anodic member for a lithium-ion battery. The method uses nanoparticles of an electrically insulating material that conducts lithium ions, is stable in contact with metallic lithium, does not insert lithium at potentials of between 0 V and 4.3 V with respect to the potential of the lithium, and has a relatively low melting point.