A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

An integrated circuit (IC) includes a first switch, a second switch, an amplifier electrically connected between the first switch and the second switch, and a base. The first switch, the second switch, and the amplifier are provided on the base. In a top view of the base, the amplifier is disposed between the first switch and the second switch.

An integrated circuit (IC) includes a first switch, a second switch, an amplifier electrically connected between the first switch and the second switch, and a base. The first switch, the second switch, and the amplifier are provided on the base. In a top view of the base, the amplifier is disposed between the first switch and the second switch.

An integrated circuit (IC) includes a first switch, a second switch, an amplifier electrically connected between the first switch and the second switch, and a base. The first switch, the second switch, and the amplifier are provided on the base. In a top view of the base, the amplifier is disposed between the first switch and the second switch.

An integrated circuit (IC) includes a first switch, a second switch, an amplifier electrically connected between the first switch and the second switch, and a base. The first switch, the second switch, and the amplifier are provided on the base. In a top view of the base, the amplifier is disposed between the first switch and the second switch.

Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.

Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.

A half-duplex transceiver includes an antenna, antenna-side transformer windings coupled to the antenna, and a low-noise amplifier coupled to the antenna by the antenna-side transformer windings.

Provided is a waveguide module for improving insertion loss and return loss. The waveguide module includes a metal jig including a waveguide through which a radio wave is transmitted and received formed therein, a chip disposed on the waveguide formed in the metal jig and including a plurality of circuits that is configured to transmit and receive radio waves inside the waveguide, and a circuit board configured to provide a bias used for an operation of the chip, wherein the metal jig includes a trench structure to dispose a radio wave absorber on a side surface of the chip in a direction crossing the waveguide.