A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

A device for controlling transmission of electromagnetic waves according to the present disclosure includes: a conductor line which is positioned on a signal layer and through which electromagnetic waves received via an input terminal travel; a ground layer electrically separated from the signal layer through a dielectric layer and electrically grounded; a shunt via including a first end and a second end and connected to the conductor line through the first end; and a photoconductive semiconductor connected between the second end of the shunt via and the ground layer and having a dielectric state or a conducting state, based on an input of an optical signal, wherein the conductor line is electrically connected to the ground layer via the shunt via and the photoconductive semiconductor in the conducting state, thereby causing reflection of electromagnetic waves from the shunt via.

A directional coupler (1) includes a substrate (10), a main line (20) formed directly or indirectly on the substrate (10), sub-lines (21, 22 and 23) at least part of each of which is formed directly or indirectly on the substrate (10) along the main line (20), a switch (30) switching connections among end portions of the plurality of sub-lines (21, 22 and 23), and detection output terminals (FWD and REV) connected to the sub-line (21), wherein, when looking at the substrate (10) in plan, the end portions of the sub-lines (21, 22 and 23) are disposed on the same side as the detection output terminals (FWD and REV) relative to the main line (20), and the sub-line (21) to which the detection output terminals (FWD and REV) are connected is overlapped with or surrounded by the sub-lines (22 and 23).

A directional coupler (1) includes a substrate (10), a main line (20) formed directly or indirectly on the substrate (10), sub-lines (21, 22 and 23) at least part of each of which is formed directly or indirectly on the substrate (10) along the main line (20), a switch (30) switching connections among end portions of the plurality of sub-lines (21, 22 and 23), and detection output terminals (FWD and REV) connected to the sub-line (21), wherein, when looking at the substrate (10) in plan, the end portions of the sub-lines (21, 22 and 23) are disposed on the same side as the detection output terminals (FWD and REV) relative to the main line (20), and the sub-line (21) to which the detection output terminals (FWD and REV) are connected is overlapped with or surrounded by the sub-lines (22 and 23).

A switch IC includes first, second and third switch units, and an amplifier. The first switch unit and the third switch unit are adjacent to each other. The third switch unit and the amplifier are adjacent to each other. The amplifier and the second switch unit are adjacent to each other. The first, second and third switch units, and the amplifier are disposed on a straight line in an order in which a signal passes through the first switch unit, the second switch unit, the third switch unit, and the amplifier.

A switch IC includes first, second and third switch units, and an amplifier. The first switch unit and the third switch unit are adjacent to each other. The third switch unit and the amplifier are adjacent to each other. The amplifier and the second switch unit are adjacent to each other. The first, second and third switch units, and the amplifier are disposed on a straight line in an order in which a signal passes through the first switch unit, the second switch unit, the third switch unit, and the amplifier.

A half-duplex transceiver includes an antenna, antenna-side transformer windings coupled to the antenna, and a low-noise amplifier coupled to the antenna by the antenna-side transformer windings.

A high-frequency switch circuit includes a first switch configured to electrify or cut off connection between an antenna terminal and an input terminal, and a second switch configured to electrify or cut off connection between the antenna terminal and an output terminal. The first switch has a transmission line connecting the antenna terminal and the input terminal; a diode having an anode connected to a first node between the transmission line and the input terminal, and a cathode connected to a second node; and a capacitor connected to the second node and a first power supply voltage. A first control terminal is connected to the first node via a first resistor and a first inductor. The first switch further includes a charging/discharging circuit connected to a second power supply voltage and the first control terminal and charging and discharging the capacitor from the second node.

A high-frequency switch circuit includes a first switch configured to electrify or cut off connection between an antenna terminal and an input terminal, and a second switch configured to electrify or cut off connection between the antenna terminal and an output terminal. The first switch has a transmission line connecting the antenna terminal and the input terminal; a diode having an anode connected to a first node between the transmission line and the input terminal, and a cathode connected to a second node; and a capacitor connected to the second node and a first power supply voltage. A first control terminal is connected to the first node via a first resistor and a first inductor. The first switch further includes a charging/discharging circuit connected to a second power supply voltage and the first control terminal and charging and discharging the capacitor from the second node.

A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.