A radio frequency (RF) transmission line is described. The RF transmission line includes a first ground line, a second ground line, and a signal line disposed on a substrate and forming a coplanar waveguide. A plasma limiter feature is integrated into an internal surface of one or more of the first ground line, the second ground line, and the signal line. The plasma limiter decreases a gap distance between the signal line and the associated ground line. The gap distance is selected, together with a gas pressure, to control a voltage at which the gas within the gap breaks down, targeted at a breakdown power of 1 W across a wide bandwidth. The plasma limiter thus limits a power transmitted by way of the RF transmission line for protecting a sensitive integrated circuit.

High-frequency thin film chip attenuators can include a substrate having a first side and a second side, a first portion coupled to the first side of the substrate, and a second portion coupled to the second side of the substrate. The first portion can include a ground section, an input contact section, and an output contact section. The second portion can include a ground section, an input section, an output section, and a plurality of resistive sections providing electrical communication between the input section, the output section, and the ground section. The resistive sections can be arranged in an attenuation configuration to attenuate a signal received at the input section and output via the output section. A plurality of through-holes extending through the substrate can provide electrical communication between sections on the first side of the substrate and associated sections on the second side of the substrate.

A switch comprises a first elastic element, an actuator-element mechanically coupled to a first side of the first elastic element, and a first switching conductor, mechanically coupled to a second side of the first elastic element. The switching conductor is configured for moving between a first conductor position and a second conductor position. The actuator-element is configured from moving between a first actuator-element position and a second actuator-element position separated by a predefined actuator-element lift, thereby moving the first side of the first elastic element. The first elastic element moreover is configured for converting a movement of the first side of the first elastic element by the predefined actuator-element lift into the movement of the second side of the first elastic element with a predefined elastic force.

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

A differential signal transmitting circuit board includes a substrate, at least two differential conductive elements, and at least one insulating element. The differential conductive elements are disposed in the substrate. The insulating element is disposed in the substrate. The insulating element is close to or contacted to the differential conductive elements. A material of the substrate has a first equivalent dielectric constant. A material of the insulating element has a second equivalent dielectric constant. The first equivalent dielectric constant is different from the second equivalent dielectric constant.

Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.

A switch comprises a first elastic element, an actuator-element mechanically coupled to a first side of the first elastic element, and a first switching conductor, mechanically coupled to a second side of the first elastic element. The switching conductor is configured for moving between a first conductor position and a second conductor position. The actuator-element is configured from moving between a first actuator-element position and a second actuator-element position separated by a predefined actuator-element lift, thereby moving the first side of the first elastic element. The first elastic element moreover is configured for converting a movement of the first side of the first elastic element by the predefined actuator-element lift into the movement of the second side of the first elastic element with a predefined elastic force.

A switch comprises a first strip conductor and a second strip conductor, arranged orthogonally in a first plane. Moreover, the switch comprises a first switching conductor, having an orthogonally angled shape relative to the first plane. The switch comprises a switching actuator, which is mechanically connected to the first switching conductor and adapted to move vertically relative to the first plane to a first position and to a second position. The switching actuator is configured, so that in the first position, the first strip conductor is in contact with the first switching conductor and the second strip conductor is in contact with the first switching conductor, and so that in the second position, the first strip conductor and the second strip conductor are not in contact with the first switching conductor.

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

Electrical devices having variable electrical properties. The variable electrical characteristics or operation of the devices are based on the potential applied to a variable-dielectric constant sector associated with the device. The electronic devices or component may include bends, power splitters, filters, ports, phase shifters, frequency shifters, attenuators, couplers, capacitors, inductors, diplexers, hybrids of beam forming networks.