According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance transmission line such as a microstrip or coplanar waveguide is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit.

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

A method of making a semiconductor device includes forming a first transmission line over a substrate. The method includes forming a second transmission line over the substrate. The method further includes depositing a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The method further includes depositing a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts the first transmission line or the second transmission line.

A polycrystal having a physical property that enables an AC resistance value to drop sharply is used to reduce transmission loss of a high frequency signal being transmitted. A high frequency transmission device D1 is provided that includes a dielectric 100 and a transmission line 200 adapted for transmitting therethrough high frequency signals. At least part of the transmission line 200 is located on or inside the dielectric 100. At least part of the transmission line 200 is composed of a polycrystal composed of conductor fine particles. The polycrystal has a physical property such that, when a high frequency signal to be transmitted through the transmission line 200 is of frequencies within one or more specific frequency bands, the AC resistance value drops sharply.

An apparatus includes an electrical connector. The electrical connector is configured to electrically couple a signal transmission line to another signal transmission line. The electrical connector includes a first electrical conductor and a second electrical conductor. The first electrical conductor is disposed around a center axis. The first electrical conductor is disposed azimuthally symmetric around the center axis. The second electrical conductor is disposed around the center axis and around the first electrical conductor. The second electrical conductor is disposed azimuthally symmetric around the center axis. Faces on opposing ends of the electrical connector along the center axis are configured to mate the signal transmission line and the second electrical conductor in a first plane and the other signal transmission line and the second electrical conductor in a second plane.

Provided is a print circuit board including: a ground conductor layer; a pair of strip conductors extending along a first orientation; a first resonator conductor three-dimensionally intersecting with the pair of strip conductors along a second orientation; a pair of first via holes connecting the first resonator conductor and the ground conductor layer; and a dielectric layer including the first resonator conductor therein, and being disposed between the ground conductor layer and the pair of the strip conductors. A distance H.sub.1 between the pair of strip conductors and the ground conductor layer is twice or more a distance H.sub.2 between the pair of strip conductors and the first resonator conductor, and a line length L of the first resonator conductor is 0.4 wavelength or more and 0.6 wavelength or less at a frequency corresponding to the bit rate.

A reversible superconducting circuit includes two Josephson transmission lines. Inductors connect Josephson Junctions in the array. Each transmission line passes a fluxon along the Junctions. The circuit includes an interface with first and second shunt capacitors coupled to the first and second transmission lines, and a third shunt capacitor, forming a connecting circuit with the first and second shunt capacitors. The shunt capacitors include Josephson junctions in parallel. The connecting circuit receives an input fluxon and transmits an output fluxon. The circuit also includes a Josephson Junction and inductor in parallel with the third shunt capacitor, forming a storage circuit. The storage circuit stores a SFQ. The output fluxon has polarity based on the SFQ stored when the first fluxon is received. The input fluxon causes the polarity of the stored SFQ to be the same as the polarity of the input fluxon, immediately after the input fluxon is received.

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

A multilayer substrate includes an insulator that includes a first region and a second region that is thinner than the first region, and a first signal line and a second signal line that are structured to extend across the first region and the second region. In a region in which the first signal line and the second signal line face each other, a line width of the first signal line and a line width of the second signal line are smaller in the second region than in the first region, and a distance between the first signal line and the second signal line is smaller in the second region than in the first region.

According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance microstrip is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit. In an embodiment, a greater series or source feedback is provided at a later stage of a multistage amplifier circuit, whereas a smaller series or source feedback is provided at an earlier stage of the multistage amplifier circuit.