This document describes techniques, apparatuses, and systems utilizing a high-isolation transition design for differential signal ports. A differential input transition structure includes a first layer and a second layer made of a conductive metal and a substrate positioned between the first and second layers. The second layer includes a first section that electrically connects to a single-ended signal contact point and to a first contact point of a differential signal port. The first section includes a first stub based on an input impedance of the single-ended signal contact point and a second stub based on a differential input impedance associated with the differential signal port. The second layer includes a second section that electrically connects to a second contact point of the differential signal port and to the first layer through a via housed in a pad. The second section includes a third stub associated with the differential input impedance.

The invention relates to a heatsink antenna array structure, which includes a fin-shaped metal heatsink, a metal bottom base of heatsink, and a substrate. The upper surface of substrate is connected with the metal bottom base of heatsink, the lower surface is connected with a chip. The chip works as heat source. There is a rectangular through-cavity array in the bottom base as radiation aperture. The substrate contains multiple metal layers and dielectric layers. The top metal layer has rectangular apertures corresponding to the rectangular through-cavity array in the bottom base. The dielectric layers contain metallic vias to construct a substrate integrated waveguide structure. The metallic vias effectively reduce the thermal resistance between the fin-shaped metal heatsink and the chip, and form the substrate integrated waveguide structure as the feeding network of heatsink antenna array. Compared with the prior arts, the present invention realizes a conformal structure of antenna and heatsink, which improves the integration level of system.

Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.

A method of manufacturing the semiconductor structure includes: providing a substrate; forming a first conductive via and a second conductive via extending in the substrate; depositing a first dielectric layer over the substrate and the first and second conductive vias; receiving a waveguide; moving the waveguide to a location over the first dielectric layer and aligning the waveguide with a position of the first dielectric layer; attaching the waveguide to the position of the first dielectric layer; forming a first conductive member and a second conductive member over the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; and etching a backside of the substrate to electrically expose the first and second conductive vias. The first conductive member or the second conductive member is electrically connected to the first or second conductive via.

Waveguides and methods for manufacturing a waveguide that include forming a first channel in a first layer of dielectric material, the first channel comprising one or more walls; forming a second channel in a second layer of dielectric material, the second channel comprising one or more walls; depositing electrically conductive material on the one or more walls of the first channel; depositing electrically conductive material on the one or more walls of the second channel; arranging the first layer adjacent to the second layer to form a stack with the first channel axially aligned with and facing the second channel; and heating the stack so that the conductive material on the one or more walls of the first channel and the conductive material on the one or more walls of the second channel connect to form the waveguide.

An electronic device is provided. The electronic device includes a millimeter wave (mmWave) antenna including a plurality of conductive patches, a wireless communication circuit, and a radio frequency (RF) cable electrically connecting the mmWave antenna to the wireless communication circuit. A first portion of the RF cable includes a base dielectric, a metal plate disposed on one surface of the base dielectric, and a shielding film including a first region in contact with the metal plate, a second region spaced apart from the metal plate by a first height, and a third region configured to connect the first region and the second region, at least one waveguide is formed by the second region, the third region, and a portion of the metal plate, and the wireless communication circuit transmits and/or receives RF signals corresponding to the plurality of conductive patches through the at least one waveguide.

Various aspects directed towards an integrated transverse electromagnetic (TEM) transmission line structure for probe calibration are disclosed. In one example, the integrated TEM transmission line structure includes a printed circuit board (PCB) and an air-dielectric coplanar waveguide (CPW). For this example, the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In another example, a method is disclosed, which includes forming an air-dielectric CPW on a PCB in which the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In a further example, an integrated TEM transmission line structure includes an air-dielectric CPW with an air trace. For this example, a first connector is electrically coupled to a first end of the air-dielectric CPW, and a second connector is electrically coupled to a second end of the air-dielectric CPW.

A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

A wafer probe-to-waveguide adapter is transformed to a load pull device by integrating in the straight section of the waveguide a two-slug tuner with fixed penetration into diametral slots in the waveguide controlled by linear stepper actuators crossing over and sharing the same section of the waveguide.

A signal transmission system 1a is mounted on circuit boards 10A and 10B and on circuit boards 10A and 10B and includes semiconductor packages 12A and 12B containing an RF circuit as well as a dielectric waveguide 21E. The semiconductor packages 12A and 12B include the package surface 12f and the antenna 12e formed on the package surface 12f. The dielectric waveguide 21E includes a waveguide end surface 21a facing antenna 12e. An air gap G is ensured between the waveguide end surface 21a and the antenna 12e.