A pseudo coaxial line is connected to a first coplanar line at a first connecting portion and connected to a second coplanar line at a second connecting portion. The first coplanar line and the second coplanar line are, for example, differential coplanar lines. Also, a back surface concave portion in which the second connecting portion of the pseudo coaxial line is exposed is provided. The back surface concave portion is formed into an almost semicircular shape, an almost semielliptical shape, or a rectangular shape in a planar view.

A first signal lead pin is bent such that one end is connected to a first signal line of a differential coplanar line, and the other end is apart from a mounting surface. A second signal lead pin is bent such that one end is connected to a second signal line of the differential coplanar line, and the other end is apart from the mounting surface. A ground lead pin is bent such that one end is connected to a ground line of the differential coplanar line, and the other end is apart from the mounting surface.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.

A wiring substrate includes a first insulating layer with a first opening, a second insulating layer with a second opening, a high-frequency wiring layer, a first wiring layer, a second wiring layer, and a plurality of conductive pillars. The high-frequency wiring layer including a high-frequency trace is sandwiched between the first insulating layer and the second insulating layer. The first opening and the second opening expose two sides of the high-frequency trace respectively. The high-frequency trace has a smooth surface which is not covered by the first insulating layer and the second insulating layer and has the roughness ranging between 0.1 and 2 μm. The first insulating layer and the second insulating layer are all located between the first wiring layer and the second wiring layer. The conductive pillars are disposed in the second insulating layer and connected to the high-frequency trace.

Various aspects directed towards an integrated transverse electromagnetic (TEM) transmission line structure for probe calibration are disclosed. In one example, the integrated TEM transmission line structure includes a printed circuit board (PCB) and an air-dielectric coplanar waveguide (CPW). For this example, the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In another example, a method is disclosed, which includes forming an air-dielectric CPW on a PCB in which the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In a further example, an integrated TEM transmission line structure includes an air-dielectric CPW with an air trace. For this example, a first connector is electrically coupled to a first end of the air-dielectric CPW, and a second connector is electrically coupled to a second end of the air-dielectric CPW.

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.

A circuit structure includes a substrate integrated waveguide, a substrate disposed on the substrate integrated waveguide, a waveguide signal feeding element and a ring-shaped conductive element. The substrate integrated waveguide includes another substrate having a waveguide transmitting region, two conductive layers disposed on this substrate and covering the waveguide transmitting region, and at least one waveguide conductive element passing through this substrate and electrically connected to the two conductive layers. The at least one waveguide conductive element surrounds the waveguide transmitting region. One of the conductive layers is located between the two substrates. The waveguide signal feeding element passes through one substrate and one conductive layer between the substrates, and the waveguide signal feeding element extends to the waveguide transmitting region. The waveguide signal feeding element is electrically insulated from one conductive layer. The ring-shaped conductive element is disposed in one substrate and surrounds the waveguide signal feeding element.

A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (T.sub.H) with a structure of a dilution fridge stage (stage).

A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through the second polyimide film to make electrical and thermal contact with the first center conductor.

A high frequency coupler is disclosed that is configured for grid array-type surface mounting. The coupler includes a monolithic base substrate having a top surface and a bottom surface. A first thin film microstrip and a second thin film microstrip are each disposed on the top surface of the monolithic base substrate. Each microstrip has an input end and an output end. At least one via extends through the monolithic base substrate from the top surface to the bottom surface of the monolithic base substrate. The via(s) are electrically connected with at least one of the input end or the output end of the first microstrip or the second microstrip. The coupler has a coupling factor that is greater than about −30 dB at about 28 GHz.