H01R13/03

CONNECTOR DEVICE AND WIRE HARNESS MANUFACTURING METHOD

A connector device includes a connector housing having a terminal accommodating chamber, a terminal configured to be accommodated in the terminal accommodating chamber, an electric wire configured to be connected to the terminal, a corrosion-proof material to be disposed at a position facing the terminal accommodated in the terminal accommodating chamber and a corrosion-proof target portion of the electric wire, and a corrosion-proof material support portion retaining the corrosion-proof material above the connector housing such that the corrosion-proof material can be moved toward the corrosion-proof target portion. A melting point of the corrosion-proof material is set to be lower than a melting point of a material forming the connector housing, and the corrosion-proof material is configured to be melted and then cured while covering the corrosion-proof target portion.

CONNECTOR DEVICE AND WIRE HARNESS MANUFACTURING METHOD

A connector device includes a connector housing having a terminal accommodating chamber, a terminal configured to be accommodated in the terminal accommodating chamber, an electric wire configured to be connected to the terminal, a corrosion-proof material to be disposed at a position facing the terminal accommodated in the terminal accommodating chamber and a corrosion-proof target portion of the electric wire, and a corrosion-proof material support portion retaining the corrosion-proof material above the connector housing such that the corrosion-proof material can be moved toward the corrosion-proof target portion. A melting point of the corrosion-proof material is set to be lower than a melting point of a material forming the connector housing, and the corrosion-proof material is configured to be melted and then cured while covering the corrosion-proof target portion.

Female Connector, Male Connector And Connector Assembly
20220407255 · 2022-12-22 ·

The present application provides a female connector, a male connector and a connector assembly. The female connector includes: a plurality of female terminals, ends of which are radially expanded outward to form trumpet-shaped guide heads for blind mating with a male connector or a gold finger circuit board; a cantilever section of the female terminal being bent at at least one position to form an elastic pressing portion for an interference fit contact with the male connector or the gold finger circuit board; a first high-frequency radiation area being formed in the vicinity of the trumpet-shaped guide head when the female terminals are mated with the male connector or the gold finger circuit board; and a first wave-absorbing material is disposed in a spatial scope covered by the first high-frequency radiation area. By selectively disposing a wave-absorbing material in an area where a high-frequency radiation is easily generated during the use of the connector, crosstalk signals are absorbed, while normally transmitted electrical signals are kept, and an overall weight of the connector is light.

Terminal material with silver coating film and terminal with silver coating film

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

Terminal material with silver coating film and terminal with silver coating film

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

PIN TERMINAL, CONNECTOR, WIRING HARNESS WITH CONNECTOR AND CONTROL UNIT
20220393375 · 2022-12-08 ·

A pin terminal includes a bar-like base material and a plating layer covering a predetermined region of the base material. A constituent material of the base material is pure copper or a copper alloy. The plating layer includes a tin-based layer made of metal containing tin. One end side of the base material includes a tip covering portion covering an entire region in a circumferential direction of the base material. The tin-based layer includes the tip covering portion. The tip covering portion includes a thin film portion and a thick film portion at positions different in the circumferential direction of the base material. The thin film portion is provided in contact with the base material. The number of whiskers present on a surface of the thin film portion is 15 or less in a square visual field having one side length of 0.35 mm.

PIN TERMINAL, CONNECTOR, WIRING HARNESS WITH CONNECTOR AND CONTROL UNIT
20220393375 · 2022-12-08 ·

A pin terminal includes a bar-like base material and a plating layer covering a predetermined region of the base material. A constituent material of the base material is pure copper or a copper alloy. The plating layer includes a tin-based layer made of metal containing tin. One end side of the base material includes a tip covering portion covering an entire region in a circumferential direction of the base material. The tin-based layer includes the tip covering portion. The tip covering portion includes a thin film portion and a thick film portion at positions different in the circumferential direction of the base material. The thin film portion is provided in contact with the base material. The number of whiskers present on a surface of the thin film portion is 15 or less in a square visual field having one side length of 0.35 mm.

CONDUCTIVE BASE MEMBER AND MULTILAYER CONDUCTIVE BASE MEMBER

To provide a flexible conductive base member and a multilayer conductive base member including the same, having no problem of failing to function as a contact and causing a variation in height between contacts.

There are a covered region 10 covered with a noble metal and a non-covered region 20 not circumferentially covered with a noble metal on a surface of a reticulated fibrous body 50. The covered region 10 is located at an intersection 7 of fibers 5 of the reticulated fibrous body 50, and the intersections 7 are connected to each other. The non-covered region 20 is located between the intersections 7 of the fibers 5 of the reticulated fibrous body 50.

TERMINAL MATERIAL FOR CONNECTOR

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

TERMINAL MATERIAL FOR CONNECTOR

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.