A laser device includes a first actuator configured to adjust an oscillation wavelength of pulse laser light; a second actuator configured to adjust a spectral line width of the pulse laser light; and a processor configured to determine a target spectral line width by reading data specifying a number of irradiation pulses of the pulse laser light with which one location of an irradiation receiving object is irradiated and a difference between a shortest wavelength and a longest wavelength, control the second actuator based on the target spectral line width, and control the first actuator so that the oscillation wavelength periodically changes every number of the irradiation pulses between the shortest wavelength and the longest wavelength.

A laser adjustment method includes a first adjustment step and a second adjustment step. In the first adjustment step, using a light detector detecting a second harmonic light, optical intensity and wavelength of the second harmonic light is detected and a first temperature adjuster is adjusted to adjust temperatures of a Nd:YVO.sub.4 crystal and a KTP crystal such that the detected wavelength of the second harmonic light approaches a desired wavelength and such that the optical intensity of the second harmonic light reaches at least a predetermined value. In the second adjustment step, after the first adjustment step, a temperature of an etalon is adjusted by a second temperature adjuster such that the detected wavelength of the second harmonic light approaches the desired wavelength and such that the optical intensity of the second harmonic light reaches at least a predetermined value.

A short-pulse, narrowband, line-selectable and tunable solid-state laser is described. The device requires a pump source, an active solid-state laser medium, an enclosing cavity, mirrors to contain the light, a method of removing the pulse from the cavity, a wavelength selection system, and a laser linewidth narrowing system. One implementation of this is an Er:YAG laser, side pumped by semiconductor lasers in the erbium absorption band near 1475 nm, with an intracavity etalon and a switchable spectral filter. To remove the pulse from the cavity, cavity dumping issues, which assures constant pulse energy and pulse length over a range of repetition rates, in this case from 100 Hz to 20 kHz. Line selection is obtained by use of wavelength filters and fine tuning with an etalon, which also acts as the linewidth narrowing system.

An array of surface-emitting gain chips includes a common substrate, plural gain chips formed on the common substrate, each configured to generate a light beam, plural optical couplers, each located on a top surface of a corresponding gain chip of the plural gain chips, plural optical fibers, each connected with one end to a corresponding optical coupler of the plurality of optical couplers, an array wide optical coupler connected to another end of the plural optical fibers, and a single optical fiber connected to the array wide optical coupler and configured to output the combined light beams.

Provided is a variable wavelength laser device that achieves phase control of high precision while restraining thermal interference and stably outputs emission light of desired wavelength.

The variable wavelength laser device of the present invention includes: an optical amplification means including a low-reflective surface that reflects light of wavelengths other than a predetermined wavelength and emits light of the predetermined wavelength; a wavelength control means for controlling wavelength of light being transmitted through the optical waveguide; a phase control means for controlling phase of light being transmitted through the optical waveguide using heat emitted by a heating means; a reflection means for totally reflecting the inputted light; and a heat dissipation means for restraining transfer of heat emitted by the heating means to regions other than a region in which the phase control means is disposed.

A mode locking device is disclosed for altering repetition rate in a mode-locked laser. In an example device, laser light is coupled from a fiber into a cavity through a sliding pigtail collimator with a diameter selected such that it is a close tolerance fit with a female snout on a package. A lens focuses laser light to an appropriate spot size onto a SAM or SESAM, such that back-reflection into the fiber is maximized, A piezoelectric transducer is mounted in cooperation with the SAM or SESAM for cavity tuning.

A semiconductor laser tuned with an acousto-optic modulator. The acousto-optic modulator may generate standing waves or traveling waves. When traveling waves are used, a second acousto-optic modulator may be used in a reverse orientation to cancel out a chirp created in the first acousto-optic modulator. The acousto-optic modulator may be used with standing-wave laser resonators or ring lasers.

An optical transformer includes a plurality of light emitters, a plurality of photovoltaic cells positioned to receive light from at least a first subset of the plurality of light emitters, the plurality of photovoltaic cells including at least a first photovoltaic cell and a second photovoltaic cell, and one or more optically triggered switches positioned to receive light from at least a second subset of the plurality of light emitters, the one or more optically triggered switches including at least a first optically triggered switch electrically coupled to the first photovoltaic cell and the second photovoltaic cell. A method of operating the optical transformer is also described.

The present invention relates to a diode laser with external spectrally selective feedback. It is an object of the invention is to provide an external cavity diode laser with wavelength stabilization which allows an increased overall output power in the desired wavelength range. According to the invention, an external cavity diode laser arrangement is disclosed comprising: an active medium positioned inside an internal laser cavity (10), the internal laser cavity (10) comprising an exit facet (12) adapted for outcoupling laser radiation; an external frequency-selective element (14) positioned outside the internal laser cavity (10) and adapted for wavelength stabilization of the laser radiation; a beam divider (16) positioned outside the internal laser cavity (10) and adapted to divide the outcoupled laser radiation (B0) into a first beam (B1) extending along a first beam path (P1) and a second beam (B2) extending along a second beam path (P2), the first beam (B1) having higher radiant intensity than the second beam (B2) and the first beam path (P1) being different from the second beam path (P2); and an intensity control means to control the radiant intensity incident to the external frequency selective element (14); wherein the external frequency-selective element (14) and the intensity control means are arranged in the second beam path (P2). The intensity control means in the second beam path (P2) may comprise a polarization modifying means (18) and and a polarizer (20) in order to reduce thermal stress at the frequency-selective element (14).

A device may include a first photodetector to generate a first current based on an optical power of an optical beam. The device may include a beam splitter to split a portion of the optical beam into a first beam and a second beam. The device may include a wavelength filter to filter the first beam and the second beam. The wavelength filter may filter the second beam differently than the first beam based on a difference between an optical path length of the first beam and an optical path length of the second beam through the wavelength filter. The device may include second and third photodetectors to respectively receive, after the wavelength filter, the first beam and the second beam and to generate respective second currents.