A deep ultraviolet (DUV) optical system includes: an optical source system including: a plurality of optical oscillators; a beam combiner; and a beam control apparatus between the optical oscillators and the beam combiner. The beam combiner is configured to receive and direct light emitted from any of the optical oscillators toward a scanner apparatus as an exposure light beam, and the beam control apparatus is configured to determine whether the beam combiner receives light from a particular one of the optical oscillators. The DUV optical lithography system also includes a control system coupled to the optical source system, the control system configured to: determine whether a condition exists in the DUV optical system, and based on a determination that the condition exists, perform a calibration action in a subset of the optical oscillators.

The present invention provides a laser, including: a medium, having a ground state, an intermediate state, and an excited state in ascending order of energy; an excitation system, configured to excite electrons in the medium from the ground state to the intermediate state; and an excitation laser, configured to drive electrons in the intermediate state at different spatial positions in the medium to the ground state through a stimulated emission process with a fixed phase relationship, to generate a laser with a shorter relative wavelength. Due to the use of an excitation laser to drive electrons from the intermediate state, the photons generated by the stimulated emission have coherence, thereby forming a laser. In the present invention, an excitation system performing primary pumping combined with an excitation laser with a relatively long wavelength performing secondary pumping generate lasers with a relatively short wavelength, and the structure of the short-wavelength laser is simple, compact, and easy to be implemented. In addition, the cost of the short-wavelength laser can be reduced, and a laser with a shorter wavelength can be obtained.

A gas laser device includes a shielding plate that is a first shielding member, and a shielding plate that is a second shielding member. The first shielding member includes a first opening, and a second opening. A laser beam that is to be propagated to discharge regions passes through the first opening. The laser beam that has taken a round trip through the discharge regions after passing through the first opening passes through the second opening. The second shielding plate faces the first shielding member the discharge regions located therebetween. The shielding plate includes an opening that is a third opening. The laser beam that has been propagated through the first opening and the discharge regions, and the laser beam that is to be propagated to the second opening through the discharge regions pass through the third opening. A plane shape of the third opening includes a rectilinear segment.

A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.

A light source capable of operating third and fourth reflection mirrors included in a beam splitting device in conjunction with movements of first and second reflection mirrors included in a beam transfer device and an optical assembly, respectively. The third and fourth reflection mirrors are disposed on optical paths of a pre-pulse and a main pulse emitted from first and second pulse generators, respectively. The light source operates the third and fourth reflection mirrors to offset an excessive compensation of the main pulse caused in a process of compensating for an optical path error of the pre-pulse. The light source may be included in an extreme ultraviolet light source system.

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

A gas laser apparatus includes a chamber; a window provided in the chamber; an optical path tube connected to the chamber; a gas supply port that supplies a purge gas into the optical path tube; an exhaust port that exhausts a gas in the optical path tube; and a control unit, the exhaust port including a main exhaust port provided in the optical path tube, and an auxiliary exhaust port provided in the optical path tube upstream of a flow of the gas in the optical path tube with respect to positions of the window and the main exhaust port, the control unit causing the gas to be exhausted through the main exhaust port before a laser beam is emitted from the chamber and causing the gas to be exhausted through the auxiliary exhaust port in at least a partial period when the laser beam is emitted.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.

A laser system according to one aspect of the present disclosure includes a wavelength-variable first solid-state laser device configured to output a first pulse laser beam; a wavelength conversion system including a first nonlinear crystal configured to wavelength-convert the first pulse laser beam and a first rotation stage configured to change a first incident angle of the first pulse laser beam on the first nonlinear crystal; an excimer amplifier configured to amplify a pulse laser beam wavelength-converted by the wavelength conversion system; and a control unit configured to receive, from an external device, data of a target center wavelength of an excimer laser beam output from the excimer amplifier, control a wavelength of the first pulse laser beam in accordance with the instructed target center wavelength, and control the first incident angle on the first nonlinear crystal in accordance with an average value of the target center wavelength.