A solid-state laser system may include a first solid-state laser unit, a second solid-state laser unit, a wavelength conversion system, a wavelength detector, and a wavelength controller. The wavelength conversion system may receive a first pulsed laser light beam with a first wavelength and a second pulsed laser light beam with a second wavelength, and output a third pulsed laser light beam with a third wavelength converted from the first and second wavelengths. The wavelength controller may control the first solid-state laser unit to vary the first wavelength on a condition that an absolute value of a difference between a value of a target wavelength and a value of the third wavelength detected by the wavelength detector is equal to or less than a predetermined value, and control the second solid-state laser unit to vary the second wavelength on a condition that the absolute value exceeds the predetermined value.

A WDM seed beam source for a fiber laser amplifier system that includes a number of master oscillators that generate seed beams at different wavelengths and a spectral multiplexer that multiplexes all of the seed beams onto a single fiber. An EOM modulates the combined seed beams on the single fiber and a spectral demultiplexer then separates the modulated seed beams into their constituent wavelengths on separate fibers before the seed beams are amplified and spectrally combined. The fiber laser amplifier system includes a separate fiber amplifier that amplifies the separated seed beams, an emitter array that directs the amplified beams into free space, beam collimating optics that focuses the uncombined beams, and an SBC grating responsive to the collimated uncombined beams that spatially combines the collimated uncombined beams.

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is higher than 1.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

Embodiments of the disclosure provide an apparatus for emitting laser light and a system and method for detecting laser light returned from an object. The system includes a transmitter and a receiver. The transmitter includes one or more laser sources, at least one of the laser sources configured to provide a respective native laser beam having a wavelength above 1,100 nm. The transmitter also includes a wavelength converter configured to receive the native laser beams provided by the laser sources and convert the native laser beams into a converted laser beam having a wavelength below 1,100 nm. The transmitter further includes a scanner configured to emit the converted laser beam to the object in a first direction. The receiver is configured to detect a returned laser beam having a wavelength below 1,100 nm and returned from the object in a second direction.

Apparatuses including integrated circuit (IC) optical assemblies and processes for fabrication of IC optical assemblies are disclosed herein. In some embodiments, the IC optical assemblies include an optical transmitter component electrically coupled to a first portion of a packaging substrate. The IC optical assemblies further include an optical transmitter driver component between the optical transmitter component and a second portion of the packaging substrate, wherein a first side of the optical transmitter driver component is electrically coupled to the optical transmitter component. The IC optical assemblies further include a plurality of bumps between a second side of the optical transmitter driver component and proximate the second portion of the packaging substrate, wherein the plurality of bumps are not directly coupled to the optical transmitter driver component.

A solid-state laser system may include first and second solid-state laser units, a wavelength conversion system, an optical shutter, and a controller. The first solid-state laser unit and the second solid-state laser unit may output first pulsed laser light with a first wavelength and second pulsed laser light with a second wavelength, respectively. The controller may perform first control and second control. The first control may cause the first and second pulsed laser light to enter the wavelength conversion system at a substantially coincidental timing, thereby causing the wavelength conversion system to output third pulsed laser light with a third wavelength converted from the first wavelength and the second wavelength, and the second control may prevent the first and second pulsed laser light from entering the wavelength conversion system at the coincidental timing, thereby preventing the wavelength conversion system from outputting the third pulsed laser light.

In an embodiment, a laser apparatus comprises a semiconductor laser, e.g., of the VECSEL type, for generating pulsed laser radiation having a pulse duration in the femtosecond range or shorter and having a pulse repetition rate of at least 100 MHz; a selector for selecting groups of pulses from the laser radiation, each pulse group comprising a plurality of pulses at the pulse repetition rate, wherein the pulse groups are time-displaced by at least 500 ns; a scanner device for scanning a focal point of the laser radiation; a controller for controlling the scanner device based on a control program including instructions that, when executed by the controller, bring about the creation of a LIOB-based photodisruption for each pulse group in a target material, e.g. human eye tissue.