Disclosed is a device for interaction between a laser beam and a hyperfine energy transition of a chemical species. The device further includes an electro-optic modulator with a single sideband with an input optical waveguide suitable for receiving a source laser beam and an output optical waveguide suitable for generating an output laser beam and an electronic system suitable for generating and applying, simultaneously, a first modulated electrical signal, sin(Ω.sub.1t)) to a first hyperfrequency pulse on a first high-frequency electrode of the electro-optic modulator and, respectively, another modulated electrical signal, cos(Ω.sub.1t)) to the first pulse on another high-frequency electrode of the electro-optic modulator, in such a way as to frequency-switch the output laser beam to a first optical frequency offset from the first pulse with respect to the initial optical frequency.

A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than π/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.

There is provided assemblies for combining a group of laser sources into a combined laser beam. There is further provided a blue diode laser array that combines the laser beams from an assembly of blue laser diodes. There are provided laser processing operations and applications using the combined blue laser beams from the laser diode arrays and modules.

A manufacturing method of a device for generating terahertz radiation includes forming a distributed feedback laser epitaxy module; etching the distribution feedback laser epitaxy module corresponding to a first window to a predetermined depth; forming an indium gallium arsenide epitaxy layer above the distributed feedback laser epitaxy module corresponding to the first window; etching out the indium gallium arsenide epitaxy layer corresponding to a second window to expose the distributed feedback epitaxy module corresponding to the second window; forming a first electrode, a grating, and an antenna above an upper surface of the distributed feedback laser epitaxy module, an upper surface of the indium gallium arsenide epitaxy layer, and the distributed feedback laser epitaxy module corresponding to the second window, respectively; forming a second electrode above a lower surface of the distributed feedback laser epitaxy module; and forming two metal wires between the grating and the antenna.

A laser source includes a first laser device configured to generate a first laser beam having a first wavelength, a second laser device configured to generate a second laser beam having a second wavelength, which is different from the first wavelength, and a non-linear crystal configured to receive simultaneously the first and second laser beams and to generate a third laser beam that has a third wavelength, which is larger than each of the first and second wavelengths. The non-linear crystal has a length and a width, and a variable poling period is distributed across the width so that the third wavelength varies within a given wavelength range based on an incident position of the first and second laser beams along the width of the non-linear crystal.

A sanitizing device includes a nonlinear optical element, one or more laser diodes, a lens, and a battery pack. The one or more laser diodes are each configured to direct a beam of optical energy to the nonlinear optical element. Each beam of optical energy has a first wavelength and the nonlinear optical element is configured to produce UV-C energy having a second wavelength from the beams of optical energy. The lens is configured to focus the UV-C energy to cover a desired area for sanitizing purposes. The battery pack is configured for powering the one or more laser diodes.

A photonics frequency comb generator includes two integrated dies: an indium phosphide die laser of a first wavelength is grown on from, and a silicon photonics die having a microring resonator connected to the laser and frequency modulators. The microring resonator converts the first wavelength into a number of second wavelengths. One type of the microring resonator is a hybrid non-linear optical wavelength generator, comprising non-silicon materials, such as SiC or SiGe built on silicon to yield a non-linear wavelength generation. The second wavelengths are generated by adjusting the ring's geometric size and a distance between the ring and the traverse waveguide. Another type of microring resonator splits the first wavelength into a plurality of second wavelengths and transmits the multiple second wavelengths to filters and modulators, and each selects and modulates one of the second wavelengths in a one-to-one relationship. This frequency comb generator has applications in WDM/CWDM and multi-chip modules in high speed transceivers.

A pulsed light generation device, includes: a first optical fiber through which first pulsed light and second pulsed light, having an intensity that decreases while an intensity of the first pulsed light increases, and increases while the intensity of the first pulsed light decreases, having been multiplexed and entered therein, are propagated; and a second optical fiber at which the first pulsed light, having exited the first optical fiber and entered therein, is amplified while being propagated therein, wherein: at the first optical fiber, phase modulation occurs in the first pulsed light due to cross phase modulation caused by the second pulsed light; and self-phase modulation occurring in the first pulsed light at the second optical fiber is diminished by the phase modulation having occurred at the first optical fiber.

There is provided assemblies for combining a group of laser sources into a combined laser beam. There is further provided a blue diode laser array that combines the laser beams from an assembly of blue laser diodes. There are provided laser processing operations and applications using the combined blue laser beams from the laser diode arrays and modules.

A difference frequency generation optical transmitter and sum frequency generation optical receiver operating in the mid-infrared wavelength range for use in free space optical satellite communications are described. By using mid-infrared light, the transmitter/receiver can mitigate atmospheric scintillation, scattering, and other non-ideal optical effects in the communication channel. This is achieved through the use of nonlinear optical crystals designed for difference frequency generation in the case of the transmitter and sum frequency generation for the receiver. High-speed modulated communication signals can thus be frequency converted to the mid-infrared wavelength range by a relatively low cost, compact and high-power optical communication system.