A plurality of light sources such as vertical-cavity surface-emitting lasers (VCSELs) are configured to emit light through emission apertures. The light may be near-infrared light. Optics are formed over the emission apertures of the plurality of light sources. The optics may provide different tilt angles or divergence angles to the non-visible light emitted by the light sources in the plurality of light sources.

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Provided in a method of fabricating an optical element array including providing a silicon substrate, providing a first element layer on the silicon substrate, the first element layer including a plurality of passive optical elements, providing a plurality of semiconductor blocks on a compound semiconductor wafer, providing semiconductor dies by dicing the compound semiconductor wafer by the plurality of semiconductor blocks, and providing a second element layer by providing the semiconductor dies on the first element layer, each of the plurality of semiconductor blocks contacting at least one corresponding passive optical element from among the plurality of passive optical elements.

The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The integrated circuit package includes first and second active dies. Each of the first and second active dies includes a top contact disposed on the top surface of the die and a bottom contact disposed on a bottom surface of the die. The package further includes a via die having first and second vias that each extends between a top contact disposed on a top surface of the via die and a bottom contact disposed on a bottom surface of the via die, where the bottom contact of the first active die is electrically connected to the bottom contact of the first via of the via die and the bottom contact of the second active die is electrically connected to the bottom contact of the second via of the via die.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

Embodiments of the invention are directed to a method of separating a wafer of light emitting devices. The method includes scribing a first groove on a dicing street on the wafer and checking the alignment of the wafer using a location of the first groove relative to a feature on the wafer. After checking the alignment, a second groove is scribed on the dicing street.

A surface-emitting laser array and a laser device including the surface-emitting laser array. The surface-emitting laser array includes a layered product including a lower reflecting mirror having two layers with different refractive indexes, an upper reflecting mirror, and an active layer disposed between the lower reflecting mirror and the upper reflecting mirror, a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip, and a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.