A light-emitting device includes: a base having a depressed portion upwardly opening, the depressed portion having a bottom surface, surrounding surfaces and at least one placement surface disposed at a position higher than the bottom surface; at least one semiconductor laser element mounted on or above the bottom surface; and a wavelength conversion member enclosed in the depressed portion to convert a wavelength of light from the at least one semiconductor laser element, the wavelength conversion member having a lower surface disposed on the at least one placement surface and a circumferential edge partly surrounded by the surrounding surfaces.

A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

A semiconductor laser chip and a preparation method therefor, the method comprising: providing an epitaxial wafer (100), the epitaxial wafer (100) comprising a plurality of resonant cavities (110) arranged in parallel; providing a heat sink substrate (200); attaching the epitaxial wafer (100) to the heat sink substrate (200) so as to form a first chip semi-finished product (10); performing first division on the first chip semi-finished product (10) in the direction perpendicular to the resonant cavities (110) so as to divide the first chip semi-finished product (10) into a plurality of second chip semi-finished products (20); and performing second division on the second chip semi-finished products (20) in the direction parallel to the resonant cavities (110) so as to divide the second chip semi-finished products (20) into a plurality of semiconductor laser chips (30) such that the semiconductor laser chips (30) comprise at least one laser bar.

An optical module includes: a bench part including a bench having a principal surface including first and second areas arranged in a direction of a first axis, a semiconductor optical device disposed on the first area, and a lens disposed on the first area; and a cap including a base made of silicon, the cap being disposed on the bench part. The cap has a cavity containing the semiconductor optical device and the lens, and includes a ceiling extending along a first reference plane, a front wall extending from the ceiling along a second reference plane, and a rear wall extending from the ceiling in a direction from the cap to the bench. The semiconductor optical device, the lens and the cap are arranged along an optical reference plane. The second reference plane is inclined with respect to the first reference plane.

An optical communication device is configured to include: a laser diode that outputs light; an EA modulator including a cathode and an anode, to modulate the light output from the laser diode on the basis of a high-frequency signal applied between the cathode and the anode; a resistor connected between the cathode and the anode; and a pattern line connected in series with the resistor and having an inductance component, in which each of the laser diode and the EA modulator is formed on a front surface of the high-frequency line substrate or a back surface of the high-frequency line substrate, and the pattern line is formed on a side face of the high-frequency line substrate.

A laser component has a housing, which includes a carrier having a cavity with a bottom surface and a sidewall, wherein the cavity widens starting from the bottom surface, the side wall is inclined relative to the bottom surface by an angle different from 45°, a laser chip, an emission direction of which is oriented parallel to the bottom surface, is arranged on the bottom surface in the cavity, a reflective element is arranged in the cavity and bears on an edge between the bottom surface and the side wall, a reflective surface of the reflective element defines an angle with the bottom surface of the cavity, and the emission direction defines an angle of 45° with the reflective surface of the reflective element.

A direct diode laser oscillator includes plurality of LDs that emit laser beams of multiple wavelengths, respectively, a fiber array formed by binding emitting ends of a plurality of feeding fibers that respectively transmit the laser beams of multiple wavelengths emitted from the plurality of LDs, a spectral beam combining unit that spectral-beam-combines the laser beams of multiple wavelengths emitted from the fiber array, a reflected light detecting fiber that is arranged adjacent to the fiber array and receives, through the spectral beam combining unit, reflected light of the laser beams of multiple wavelengths reflected by a work material, and a photodetector that detects the reflected light emanating from the reflected light detecting fiber.

A direct diode laser processing apparatus includes a laser oscillator including a plurality of laser diodes and emitting a multiple-wavelength laser beam, a transmission fiber transmitting the multiple-wavelength laser beam emitted from the laser oscillator, a laser processing machine collecting the multiple-wavelength laser beam transmitted through the transmission fiber and processes a workpiece, a detecting mechanism sampling part of the multiple-wavelength laser beam and detecting wavelength-by-wavelength light intensities of the sampled laser beam, a monitoring unit monitoring an output decrease in the multiple-wavelength laser beam according to a change in the wavelength-by-wavelength light intensities, and a control module controlling outputs of the plurality of laser diodes according to a monitored result from the monitoring unit. The apparatus properly monitors an output decrease in the multiple-wavelength laser beam.

An optical module for preventing laser beam leakage and a control method thereof are disclosed. The optical module including a current control circuit, a first transistor, a laser, and a laser control unit. The laser control unit is configured to: if it is detected that an optical fiber is inserted in the optical fiber interface, perform control to turn on the laser, or if it is detected that no optical fiber is inserted in the optical fiber interface, control the laser to remain in an off state. A laser beam is effectively prevented from causing human bodily injury when an optical fiber is not inserted in an optical fiber interface.

The present invention discloses a semiconductor laser comprising an optical waveguide structure which may include a lower waveguide layer, an active layer of multiple quantum wells and an upper waveguide layer, which are successively stacked from bottom to top, a grating layer being formed on upper portion of the active layer, wherein the upper waveguide layer, a cladding layer and a contact layer are formed as a ridge which has a light incidence end surface and a light output end surface, wherein a beam expanding structure is formed on one end of the output end surface. The beam expanding structure has a beam expanding portion with a shape gradually contracted inwards from the light output end surface. Preferably, the beam expanding portion has a horizontal divergence angle of 5° to 20°.