An apparatus of structured light generation is equipped with a light source and a lens unit. The lens unit is installed in a compact housing of the apparatus of structured light generation. Moreover, the lens unit constructed two different optical path lengths within the housing. By the lens unit, light beams from the light source are collimated and converted into linear light beams. The linear light beams are locally overlapped or globally overlapped. Consequently, the light beam from the light source is shaped into a linear structured light or a linearly-overlapped structured light for detection.

A technology of effectively interrupting light reflected from a wavelength selective filter so as not to be fed back to a laser diode chip in a semiconductor laser package having a function of adjusting a relative intensity ratio of a signal of “1” and a signal of “0” using an optical filter. Since an optical interruption device may effectively interrupt a light feedback to the laser diode chip by adjusting characteristics of a 45 degree partial reflection mirror in an existing TO-can type laser device having the 45 degree partial reflection mirror and additionally disposing one λ/4 waveplate, unlike previously known optical isolators using an existing Faraday rotator, the signals of “1” and “0” may be effectively adjusted in a TO-can type laser device having a small volume, thereby improving a function of communication.

An optical module with a semiconductor element, which integrates a semiconductor laser diode with an electro-absorption modulator, mounted on a carrier; and an optical transmitter apparatus implementing the optical modules are disclosed. The carrier of the optical module has a back metal connected to the ground on the top thereof through a metal provided in a side surface of the carrier but electrically isolated from the chassis ground of the optical transmitter apparatus. The optical transmitter apparatus installs a plurality of the optical modules on a thermos-electric cooler (TEC) in a top plate thereof. The top plate is electrically isolated from the chassis ground.

This disclosure relates generally to an electronic package that can include a die and a dielectric layer at least partially enveloping the die. Electrical interconnects can be electrically coupled to the die and passing, at least in part, through the dielectric layer. An optical emitter can be electrically coupled to the die with a first one of the electrical interconnects and configured to emit light from a first major surface of the electronic package. A solder bump can be electrically coupled to the die with a second one of the electrical interconnects and positioned on a second major surface of the electronic package different from the first major surface.

A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.

A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

The present invention relates to a diode laser with external spectrally selective feedback. It is an object of the invention is to provide an external cavity diode laser with wavelength stabilization which allows an increased overall output power in the desired wavelength range. According to the invention, an external cavity diode laser arrangement is disclosed comprising: an active medium positioned inside an internal laser cavity (10), the internal laser cavity (10) comprising an exit facet (12) adapted for outcoupling laser radiation; an external frequency-selective element (14) positioned outside the internal laser cavity (10) and adapted for wavelength stabilization of the laser radiation; a beam divider (16) positioned outside the internal laser cavity (10) and adapted to divide the outcoupled laser radiation (B0) into a first beam (B1) extending along a first beam path (P1) and a second beam (B2) extending along a second beam path (P2), the first beam (B1) having higher radiant intensity than the second beam (B2) and the first beam path (P1) being different from the second beam path (P2); and an intensity control means to control the radiant intensity incident to the external frequency selective element (14); wherein the external frequency-selective element (14) and the intensity control means are arranged in the second beam path (P2). The intensity control means in the second beam path (P2) may comprise a polarization modifying means (18) and and a polarizer (20) in order to reduce thermal stress at the frequency-selective element (14).

A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

A semiconductor laser device includes: a package includes a recess and an upper surface that has an outer peripheral surface and a bonding surface positioned between the recess and the outer peripheral surface, the bonding surface having inner corners on the recess side and outer corners on the outer peripheral surface side; at least one semiconductor laser element disposed in the recess of the package; and a light-transmissive member bonded to the bonding surface of the package. The radius of curvature of inner corners is greater than the radius of curvature of outer corners.