H01S5/022

LASER SIDE MODE SUPPRESSION RATIO CONTROL
20220037855 · 2022-02-03 ·

Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.

HOUSING FOR AN ELECTRONIC COMPONENT, AND LASER MODULE
20170229841 · 2017-08-10 · ·

A housing for an electronic component, in particular for a laser diode, is provided. The housing includes a mounting area for the electronic component and has a lateral wall provided with a feedthrough for a light guide. The base wall of a basic body of the housing has both a heat sink for a thermoelectric cooler and a plurality of feedthroughs for pins for electrically connecting the electronic component.

Chip-scale package and semiconductor device assembly

A chip-scale package for an edge-emitting semiconductor device and a semiconductor device assembly including such a chip-scale package are provided. The chip-scale package includes an edge-emitting semiconductor device chip, a top submount disposed on a top surface of the chip, and a bottom submount disposed on a bottom surface of the chip. The top-submount area and the bottom-submount area are each greater than the chip area and less than or equal to about 1.2 times the chip area.

Chip-scale package and semiconductor device assembly

A chip-scale package for an edge-emitting semiconductor device and a semiconductor device assembly including such a chip-scale package are provided. The chip-scale package includes an edge-emitting semiconductor device chip, a top submount disposed on a top surface of the chip, and a bottom submount disposed on a bottom surface of the chip. The top-submount area and the bottom-submount area are each greater than the chip area and less than or equal to about 1.2 times the chip area.

LASER-MACHINED OPTICAL COMPONENTS AND RELATED METHODS FOR PICK AND BOND ASSEMBLY

Methods and systems for optical assemblies are disclosed. Optical assemblies can comprise optical elements that may not require active alignment and allow for reduced performance variations. To allow for passive assembly with a machine like a bonder tool, assembly components can have bonding pads and/or fiducial markers that are fabricated using laser micromachining techniques.

LASER DEVICE

A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Low Return Loss Package Structure Of Silicon Photonics With Edge Coupler For DFB Laser Package With Len And Isolator
20170219783 · 2017-08-03 ·

A compact and highly efficient coupling structure for coupling between DFB-LD and Si PIC edge coupler with suppressed return loss may include a DFB-LD, a Si PIC comprising at least one input edge coupler and at least one output edge coupler, a silica cover lid disposed on the Si PIC and aligned edge to edge with the Si PIC, a single-mode fiber aligned to the at least one output edge coupler of the Si PIC, a lens disposed between the DFB-LD and the at least one input edge coupler of the Si PIC, and an isolator bonded to a facet of the at least one input edge coupler with a first volume of an index matching fluid. The lens may be configured to minimize a mismatch between an output spot size of the DFB-LD and a spot size of the at least one input edge coupler of the Si PIC.

FIBER COUPLED LASER SOURCE PUMP WITH WAVELENGTH DIVISION MULTIPLEXER

A pump laser package may include an input fiber to send signal light on a first optical path. A first lens may be arranged on the first optical path. The pump laser package may include a source to send pump light on a second optical path. A second lens and a negative lens may be arranged on the second optical path. The first lens and the negative lens may be arranged to create a virtual image associated with the pump light. The pump laser package may include an output fiber on a third optical path. The first lens may be arranged on the third optical path. The pump laser package may include a combiner to receive the signal light on the first optical path, receive the pump light on the second optical path, and send the signal light and the pump light on the third optical path.

LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE
20170222112 · 2017-08-03 · ·

A light-emitting element mounting substrate includes a substrate including an insulating resin material, a first conductor layer formed on a first main surface of the substrate, a second conductor layer formed on a second main surface of the substrate on the opposite side to the first main surface, metal blocks positioned such that the metal blocks are penetrating through the first conductor layer, substrate and second conductor layer, and through hole conductors formed to extend adjacent to the metal blocks respectively such that the through hole conductors electrically connect the first conductor layer and the second conductor layer. The first conductor layer has an element mounting portion formed such that a light-emitting element is mounted to a first conductor layer side on the element mounting portion, and the metal blocks are positioned such that the metal blocks have end portions in the element mounting portion of the first conductor layer.

LIGHT EMITTING DEVICE
20170276299 · 2017-09-28 ·

A light emitting device includes a semiconductor laser element, a support member and a wavelength conversion member. The support member defines a through-hole through which laser light emitted from the semiconductor laser element passes. The wavelength conversion member has a lateral surface fixed to an inner wall of the through-hole, a first main surface having a first region to which the laser light is incident, a second main surface opposite to the first main surface, and an inclined surface connected to the second main surface and the lateral surface. The inclined surface is inclined such that a thickness of a peripheral portion of the wavelength conversion member is thinner than a thickness of a center portion of the wavelength conversion member. The inclined surface partially overlaps with the first region of the first main surface in plan view.