The object is to provide a technique that allows a semiconductor laser to be efficiently cooled. A semiconductor laser light source device includes: a semiconductor laser; a cooler that cools the semiconductor laser; and a driving substrate that drives the semiconductor laser. The cooler is placed in contact with a surface of the semiconductor laser that is opposite to a light emitting surface of the semiconductor laser. Furthermore, the driving substrate is placed in contact with a surface of the cooler that is opposite to a surface of the cooler on which the semiconductor laser is placed.

A system includes a laser system having a master oscillator and a planar waveguide (PWG) amplifier having one or more laser diode pump arrays, a PWG pumphead, input optics, and output optics. The PWG pumphead is configured to receive a low-power optical beam from the master oscillator and generate a high-power optical beam. The PWG pumphead includes a laser gain medium, a cartridge, and a pumphead housing. The cartridge is configured to receive and retain the laser gain medium, and the cartridge includes one or more cooling channels configured to transport coolant in order to cool the laser gain medium. The pumphead housing is configured to receive and retain the cartridge, where the cartridge is removable from the housing.

A VCSEL illuminator module includes a module forming a physical cavity having electrical contacts positioned on an inner surface of the module that feed through the module to electrical contacts positioned on an outer surface of the module. A VCSEL device is positioned on the inner surface module and includes electrical contacts that are electrically connected to the electrical contacts on the inner surface of the module. The VCSEL device generates an optical beam when current is applied to the electrical contacts. An optical element is positioned adjacent to an emitting surface of the VCSEL device and is configured to modify the optical beam generated by the VCSEL device.

Disclosed herein is an electronic device having a substrate, and an integrated circuit disposed within the substrate and having a top surface. The integrated circuit may be a laser emitting integrated circuit or a reflected light detector. A first interconnect layer is formed on the top surface of the substrate. A first optically transparent layer is formed on the top surface of the substrate and covering the top surface of the integrated circuit. A second interconnect layer is formed on a top surface of the first optically transparent layer. The second interconnect layer is patterned so as to not obstruct light traveling to or from the top surface of the integrated circuit through the first optically transparent layer.

Described herein is a fiber laser coupler, comprising a fiber laser cable enclosed in a housing, the housing includes a circuit and a temperature sensitive variable resistance element (TSVRE) coupled to the circuit, wherein the TSVRE is in thermal contact with one or more locations within the housing and is configured to provide a resistance in the circuit associated with a temperature of the TSVRE, wherein the circuit is further configured to couple to a processor configured to determine a temperature of the TSVRE based on reading the resistance in the circuit.

A diode-laser bar assembly comprises a diode-laser bar mounted onto a cooler by way of an electrically-insulating submount. A laminated connector is provided that includes two electrically-conducting sheets bonded to opposite sides on an electrically-insulating sheet. An electrical insulator is located between the laminated connector and the cooler. One electrically-conducting sheet is connected to n-side of the diode-laser bar and the other electrically-conducting sheet is connected to p-side of the diode-laser bar.

The present disclosure describes optoelectronic modules that include an optical system tilted with respect to a focal plane. For example, an optoelectronic module can includes an optical system including a vertical alignment feature. An optoelectronic sub-assembly includes an active optoelectronic device, wherein the vertical alignment rests on a surface of the optoelectronic sub-assembly and wherein an optical axis of the optical system is tilted with respect to a focal plane in the sub-assembly.

A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.