The invention relates to methods of producing a cap substrate, to methods of producing a packaged radiation-emitting device at the wafer level, and to a radiation-emitting device. By producing a cap substrate, providing a device substrate in the form of a wafer including a multitude of radiation-emitting devices, arranging the substrates one above the other such that the substrates are bonded along an intermediate bonding frame, and dicing the packaged radiation-emitting devices, improved packaged radiation-emitting devices are provided which are advantageously arranged within a cavity free from organics and can be examined, still at the wafer level, in terms of their functionalities in a simplified manner prior to being diced.

A solid-state laser system according to an aspect of the present disclosure includes a first non-linear crystal that generates first wavelength-converted light based on a first laser beam, a first adjustment unit configured to perform phase matching of the first wavelength-converted light in the first non-linear crystal, a second non-linear crystal that generates second wavelength-converted light based on a second laser beam and the first wavelength-converted light, a second adjustment unit configured to perform phase matching of the second wavelength-converted light in the second non-linear crystal, a light detection unit configured to detect light having a selected wavelength, and a processor configured to control the first adjustment unit based on intensity of at least one of the first wavelength-converted light and the first laser beam and to control the second adjustment unit based on intensity of at least one of the second wavelength-converted light and the first wavelength-converted light.

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

A light-emitting device includes a base body; light-emitting elements mounted on an upper surface of the base body; a frame body bonded to the upper surface of the base body, the frame body including inner lateral surfaces, outer lateral surfaces, and first through-holes that extend through the frame body in a lateral direction; lead terminals that extend through the first through-holes, and each of which is electrically connected to the light-emitting elements; a cover bonded to the frame body; plate bodies bonded to an outer lateral surface or inner lateral surface of the frame body, each of the plate bodies having one or more second through-holes, wherein each of the lead terminals extends through a respective through-hole; and fixing members, each of which is disposed in a second through-hole and fixes a respective one of the one or more lead terminals.

A pluggable optical connector is configured to be insertable into and removable from an optical communication apparatus, and to be capable of communicating a modulation signal and a data signal with the optical communication apparatus. A wavelength-tunable light source is configured to output an output light and a local oscillation light. An optical transmission unit is configured to output an optical signal generated by modulating the output light in response to the modulation signal. An optical reception unit is configured to demodulate an optical signal received by using the local oscillation light to the data signal. Pluggable optical receptors are configured in such a manner that an optical fiber is insertable into and removable from the pluggable optical receptors, and configured to be capable of outputting the optical signal to the optical fiber and transferring the optical signal received thorough the optical fiber to the optical reception unit.

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

Provided are a printed circuit board configured to achieve reduction in impedance of a differential transmission line extending in a stacking direction, and an optical module. The printed circuit board includes a stacking-direction differential transmission line extending in the stacking direction, including: a differential signal via pair including a first signal via and a second signal via; and a plurality of conductor plate pairs each including a first conductor plate expanding outward from the first signal via, and a second conductor plate expanding outward from the second signal via. With respect to a perpendicular bisector of a center-of-gravity line segment connecting centers of gravity of the first and second signal vias, in each of the plurality of conductor plate pairs, centers of gravity of contours of the first and second conductor plates are located on inner sides of the centers of gravity.

A method for manufacturing a package lid member includes a metalizing step of forming a metalized layer on a surface of a glass member, a paste applying step of applying an Au—Sn paste on the metalized layer in a frame shape, a reflow step of heating the glass member to which the Au—Sn paste was applied after the paste applying step and reflowing the Au—Sn paste, and a cooling step of cooling the glass member after the reflow step to form an Au—Sn layer. The cooling step includes a holding step of holding the glass member in a temperature range of 150° C. or higher and 190° C. or lower for 2 minutes or longer.

A semiconductor laser module includes a package; a plurality of semiconductor laser elements provided in the package; a member having a plurality of mounting surfaces on which the semiconductor laser elements are mounted, the mounting surfaces being separated from a bottom surface of the package by respective distances, the distances being gradually different from each other in a manner that the mounting surfaces as a whole form a step-like form; a plurality of lenses collimating respective laser beams emitted from the semiconductor laser elements; a plurality of reflection mirrors reflecting the respective laser beams; a condenser lens unit condensing the laser beams; an optical fiber where the optical beams condensed by the condenser lenses are optically coupled; and an optical filter disposed on optical lines of the respective laser beams reflected by the reflection mirrors and reflecting light having wavelengths different from the wavelengths of the laser beams.

A method of manufacturing a light-emitting device includes providing a base body including a base section; fixing a plurality of semiconductor laser elements on an upper surface of the base section; and fixing an optical member to the base body, the optical member including a plurality of lens sections, and a non-lens section disposed at a periphery of the plurality of lens sections in a top view. In the step of fixing the optical member: the optical member is arranged above the base body; (i) an inclination and a height of the optical member are adjusted after interposing an adhesive between the base body and the non-lens section, or (ii) an adhesive is interposed between the base body and the non-lens section after adjusting the inclination and the height of the optical member; and subsequently, the adhesive is cured to fix the optical member to the base body.