Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

An optical transmission module includes a metal base including a signal terminal which extends along a first direction, a dielectric block including a dielectric substance, the dielectric block having a semiconductor plane, an optical plane, and a thermal plane, the semiconductor plane and the optical plane being parallel to the first direction, the thermal plane crossing the first direction, and the semiconductor plane being provided between the optical plane and the thermal plane in the first direction, an optical semiconductor element mounted on the semiconductor plane, the optical semiconductor element being electrically connected with the signal terminal, a temperature regulating element provided between the dielectric block and the metal base in the first direction, the temperature regulating element being contacted with the thermal plane, and a lens mounted on the optical plane.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously.

Furthermore, a method for producing an optoelectronic component (1) is specified.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A light emission module includes a first light emission unit that includes a first light emission device and emits first light. The first light emission device includes a plurality of first light emission portions, each including a light emission surface, where light from a plurality of first light emission elements is emitted, a heat dissipation surface provided opposite to the light emission surface, and a connection portion being positioned between the light emission surface and the heat dissipation surface and including a wiring mounting surface where the light emission elements are electrically connected. The light emission module further includes a first optical member that reflects the first light, a housing including a base member where the first light emission unit and the first optical member are disposed and a lid member surrounding the light emission device surrounding the first light emission unit and the first optical member that are disposed on the base member, and a heat sink being connected to the heat dissipation surface and including a mounting surface where the first light emission device is mounted. The wiring mounting surface extends upward upper than a first upper surface of the housing, and a portion of the wiring mounting surface is exposed to the outside of the housing.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part comprises a first stepped portion and a second stepped portion facing the first stepped portion; a first semiconductor laser element disposed on the bottom face and located between the first stepped portion and the second stepped portion in a top view, wherein the first semiconductor laser element is configured to emit light towards the second stepped portion; a first wiring region located on the first stepped portion; and one or more first wires, each having a first end that is connected to the first wiring region. At least one of the one or more first wires is electrically connected to the first semiconductor laser element.

A bottom-emitting multijunction VCSEL array includes a first reflector region, a multijunction active region, and a second reflector region. In one aspect, the multijunction VCSEL array is attached to a submount by flip-chip bonding. In another aspect, the multijunction VCSEL array further includes a contact layer formed between the first reflector region and the substrate. The multijunction VCSEL array is attached to a submount by flip-chip bonding.

An adapter element (10) for connecting a component (4), such as a laser diode, to a heat sink (7), comprising: a first metal layer (11), which in a mounted state faces the component (4), and a second metal layer (12), which in the mounted state faces the heat sink (7), and an intermediate layer (13) comprising ceramic arranged between the first metal layer (11) and the second metal layer (12), wherein the first metal layer (11) and/or the second metal layer (12) is thicker than 40 μm, preferably thicker than 70 μm and more preferably thicker than 100 μm.