A device for cooling a laser diode pump comprising a Low Size Weight Power Efficient (SWAP) Laser Diode (LSLD) assembly, including a laser diode coupled to a submount on a first surface, the submount comprising a first thermally conductive material and a heatsink coupled to a second surface of the submount, wherein the heatsink comprises a second thermally conductive material, the heatsink comprising one or more members formed on a side opposite the coupled submount. The device further comprising a housing coupled to the LSLD assembly, the housing comprising a carrier structure having an aperture configured to support the LSLD assembly on a first side and having a plurality of channels on a second side, a bottom segment configured to couple to the carrier segment to create an enclosure around the channels between a top side of the bottom segment and the second side of the carrier structure, an inlet and outlet formed in the housing for transporting a coolant into and out of the channels in the enclosure, wherein the members are disposed within the enclosure so as to expose the members to the coolant.

A laser navigational system for a vehicle having a lighting assembly configured for emission of light. A lens array assembly receives incoming light from the lighting assembly and changes the direction of the incoming light received from the lighting assembly such that the outgoing light emanating from the lens array assembly is collimated in a first direction but diverges along a different, second direction. A scanning unit aligns with the lighting assembly to direct the collimated beam in two orthogonal directions. The lighting assembly, the lens array assembly and the scanning unit are configured to direct the light to form a visual beacon that guides navigation of the vehicle to a location.

An electrical component assembly includes a substrate and first and second electrical components attached to the substrate and operably connected with each other via the substrate. In use the first electrical component generates a first amount of heat and the second component generates a second amount of heat. The first component is thermally connected with a heat sink along a first heat path and the second component is connected with the heat sink along a second, different, heat path, such that the thermal conductivity between the first and second components is lower than the thermal conductivity of the first heat path and of the second heat path.

An optical network unit (ONU) comprising a media access controller (MAC) configured to support biasing a laser transmitter to compensate for temperature related wavelength drift receiving a transmission timing instruction from an optical network control node, obtaining transmission power information for the laser transmitter, estimating a burst mode time period for the laser transmitter according to the transmission timing instruction, and calculating a laser phase fine tuning compensation value for the laser transmitter according to the burst mode time period and the transmission power information, and forwarding the laser phase fine tuning compensation value toward a bias controller to support biasing a phase of the laser transmitter.

Various optical systems equipped with diode laser light sources are discussed in the present application. One example system includes a diode laser light source for providing a beam of radiation. The diode laser has a spectral output bandwidth when driven under equilibrium conditions. The system further includes a driver circuit to apply a pulse of drive current to the diode laser. The pulse causes a variation in the output wavelength of the diode laser during the pulse such that the spectral output bandwidth is at least two times larger than the spectral output bandwidth under the equilibrium conditions.

The object is to provide a technique that allows a semiconductor laser to be efficiently cooled. A semiconductor laser light source device includes: a semiconductor laser; a cooler that cools the semiconductor laser; and a driving substrate that drives the semiconductor laser. The cooler is placed in contact with a surface of the semiconductor laser that is opposite to a light emitting surface of the semiconductor laser. Furthermore, the driving substrate is placed in contact with a surface of the cooler that is opposite to a surface of the cooler on which the semiconductor laser is placed.

The object is to provide a technique that allows a semiconductor laser to be efficiently cooled. A semiconductor laser light source device includes: a semiconductor laser; a cooler that cools the semiconductor laser; and a driving substrate that drives the semiconductor laser. The cooler is placed in contact with a surface of the semiconductor laser that is opposite to a light emitting surface of the semiconductor laser. Furthermore, the driving substrate is placed in contact with a surface of the cooler that is opposite to a surface of the cooler on which the semiconductor laser is placed.

A system includes a laser system having a master oscillator and a planar waveguide (PWG) amplifier having one or more laser diode pump arrays, a PWG pumphead, input optics, and output optics. The PWG pumphead is configured to receive a low-power optical beam from the master oscillator and generate a high-power optical beam. The PWG pumphead includes a laser gain medium, a cartridge, and a pumphead housing. The cartridge is configured to receive and retain the laser gain medium, and the cartridge includes one or more cooling channels configured to transport coolant in order to cool the laser gain medium. The pumphead housing is configured to receive and retain the cartridge, where the cartridge is removable from the housing.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

An air-cooled laser device having a heat radiating structure capable of effectively radiating heat generated by a laser diode module and also radiating heat generated by a heating component other than the laser diode module, without being increased in size. The laser device has: laser diode modules; a heat-receiving plate horizontally-arranged, to which the laser diode modules are thermally connected; at least one L-shaped heat-transferring member extending inside the heat-receiving plate and bending at a right angle outside heat-receiving plate; a plurality of heat radiating fins attached to a vertical portion of the heat-transferring member so that each fin extends in a horizontal direction; and an axial fan for sending air to an upper space of the heat-receiving plate through between the fins. The air after flowing between the fins cools a heating component other than the laser diode module, positioned in the upper space, without changing the flow direction.