Patent classifications
H01S5/062
Diffusion safety system
A power beaming system includes a power beam transmitter arranged to transmit the power beam, and a power beam receiver arranged to receive the power beam from the power beam transmitter. A power beam transmission source is arranged to generate a laser light beam for transmission by the power beam transmitter from a first location toward a remote second location. A beam-shaping element shapes the laser light beam, at least one diffusion element uniformly distributes light of the shaped laser light beam, and a projection element illuminates a power beam receiving element of predetermined shape with the shaped laser light beam. At the power beam receiver, a diffusion surface diffuses a portion the power beam specularly reflected from the power beam receiver.
Interferometry with pulse broadened diode laser
Various optical systems equipped with diode laser light sources are discussed in the present application. One example system includes a diode laser light source for providing a beam of radiation. The diode laser has a spectral output bandwidth when driven under equilibrium conditions. The system further includes a driver circuit to apply a pulse of drive current to the diode laser. The pulse causes a variation in the output wavelength of the diode laser during the pulse such that the spectral output bandwidth is at least two times larger than the spectral output bandwidth under the equilibrium conditions.
Method and device for etching patterns inside objects
Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.
Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits
Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.
Broadened spectrum laser diode for display device
A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.
Broadened spectrum laser diode for display device
A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.
ADDRESSABLE VERTICAL CAVITY SURFACE EMITTING LASER ARRAY FOR GENERATING STRUCTURED LIGHT PATTERNS
An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.
TUNABLE LASER SOURCE
The invention relates to a tunable laser source, and the reduction in the loss and the size can both be achieved in a tunable laser source having a power monitor and a wavelength locker function. A tunable laser is formed of a semiconductor optical amplifier and a resonator, and one of the two output light beams split from part of the light within the tunable laser by a 2×2 type optical splitter is incident into a light intensity monitor, and the other is incident into a wavelength locker.
Tunable Laser Diode
An oscillation wavelength adjustment type TLD for adjusting a control amount of a resonator length L, independently from physical property values of a waveguide material when a waveguide is used in the phase adjustment, without an external resonator structure in accordance with a MEMS technology employs a reflective phase adjuster (20) including a multi-mode interference waveguide (21), which is optically coupled to an optical gain waveguide and has a configuration including one input port and five output ports, and a reflective delay line array (25) connected to an output waveguide on a side of the five output ports of the multi-mode interference waveguide (21). Five reflective delay lines (24-0 to 24-4) provided in the reflective delay line array (25) are capable of adjusting the intensity of reciprocating light in accordance with a wavelength change of transmitted light. The intensity of the reciprocating light can also be adjusted by an electric signal applied from the outside.
Tunable Laser Diode
An oscillation wavelength adjustment type TLD for adjusting a control amount of a resonator length L, independently from physical property values of a waveguide material when a waveguide is used in the phase adjustment, without an external resonator structure in accordance with a MEMS technology employs a reflective phase adjuster (20) including a multi-mode interference waveguide (21), which is optically coupled to an optical gain waveguide and has a configuration including one input port and five output ports, and a reflective delay line array (25) connected to an output waveguide on a side of the five output ports of the multi-mode interference waveguide (21). Five reflective delay lines (24-0 to 24-4) provided in the reflective delay line array (25) are capable of adjusting the intensity of reciprocating light in accordance with a wavelength change of transmitted light. The intensity of the reciprocating light can also be adjusted by an electric signal applied from the outside.