Patent classifications
H01S5/065
SEMICONDUCTOR MODE-LOCKED LASER DUAL COMB SYSTEM
A photonic integrated circuit-based dual frequency comb source, an integrated system for dual comb spectroscopy and corresponding method are disclosed. The dual comb source includes, on a same substrate of the photonic integrated circuit, a first and second semiconductor integrated mode-locked laser, a master laser, and connection arrangement between the master laser and each of the first and second mode-locked laser. The master laser is configured for generating a lasing line for simultaneous optical injection-locking of the first and second mode-locked laser, the first and second mode-locked laser are configured for generating a first and second frequency comb respectively, and the connection arrangement is suitable for coherently transferring lasing light from the master laser to each mode-locked laser. The mode-locked lasers include a gain section and a saturable absorber section to provide mode-locking, and an extended optical cavity formed in the substrate.
Lidar Device Using Frequency Modulation Continuous Wave
A lidar device, comprising a laser generator and a lidar unit, is provided and operated with frequency modulation continuous wave. The laser generator comprises an amplifier unit; and a reflector unit connected with at least one end of the amplifier unit. The amplifier unit comprises at least one first luminous gain area and at least one second luminous gain area. The first luminous gain area is operated in a saturated region with a first current source applied. The second luminous gain area is operated in a linear region with a second current source applied. Thus, a laser is generated and outputted to the lidar unit. The laser generator is operated with the luminous gain areas of the amplifier unit pushed into the saturated region to suppress intensity modulation and fix power. Even if current changes, frequency drifts only with continuity and adjustability achieved and no mode hop happened.
METHODS AND RELATED SYSTEMS OF ULTRA-SHORT PULSE DETECTION
Ultra-short pulse detection. At least some example embodiments are methods including: receiving by an antenna a series of ultra-short pulses of electromagnetic energy at a repetition frequency, the receiving creates a pulse signal; self-mixing or intermodulating the pulse signal by applying the pulse signal to a non-linear electrical device, thereby creating a modulated signal; and filtering the modulated signal to recover a filtered signal having an intermodulated frequency being the repetition frequency.
METHODS AND RELATED SYSTEMS OF ULTRA-SHORT PULSE DETECTION
Ultra-short pulse detection. At least some example embodiments are methods including: receiving by an antenna a series of ultra-short pulses of electromagnetic energy at a repetition frequency, the receiving creates a pulse signal; self-mixing or intermodulating the pulse signal by applying the pulse signal to a non-linear electrical device, thereby creating a modulated signal; and filtering the modulated signal to recover a filtered signal having an intermodulated frequency being the repetition frequency.
Generating optical pulses via a soliton state of an optical microresonator coupled with a chip based semiconductor laser
A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.
TUNABLE LASER SOURCE
The invention relates to a tunable laser source, and the reduction in the loss and the size can both be achieved in a tunable laser source having a power monitor and a wavelength locker function. A tunable laser is formed of a semiconductor optical amplifier and a resonator, and one of the two output light beams split from part of the light within the tunable laser by a 2×2 type optical splitter is incident into a light intensity monitor, and the other is incident into a wavelength locker.
Method and system for providing directional light sources with broad spectrum
A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
Diode laser having reduced beam divergence
The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of π after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.
Optical modulator with vertical-cavity surface-emitting lasers
An apparatus includes a plurality of VCSELs, a master laser, one or more electrical drivers, and an optical combiner. The master laser is configured to transmit laser light to the VCSELs to optically lock wavelengths of the VCSELs. The one or more electrical drivers are connected to directly electrically modulate the VCSELs in a manner responsive to one or more digital data stream. The optical combiner is configured to combine light received from, at least, a pair of the VCSELs into an optical carrier with a substantially phase digital data modulation.
OPTOELECTRONIC DEVICES WITH TUNABLE OPTICAL MODE AND CARRIER DISTRIBUTION IN THE WAVEGUIDES
Solid-state optical devices (10) enable tuning of an electrically tunable depletion region (200) to reduce and block lateral (in-junction) carrier spreading. This capability reduces the negative effects of gain-guiding in the junction plane and reduces an astigmatism of an emitted light beam. The tunable depletion region is created by forming a highly resistive Schottky contact (105, 110) or metal-insulator-semiconductor (MIS) structure (205, 210) next to a waveguide (optical mode propagation) and current injection region (215), where lateral spread due to diffusion is expected. The depletion region area is tuned by applying a bias to the highly resistive Schottky contact or the MIS contact structure. Such contacts or similar lossy structures reduce in-junction plane gain-guiding also when unbiased by creating additional optical loss for the mode, thus reducing the effective carrier density participating in light generation, thereby reducing astigmatism.