Patent classifications
H01S5/068
Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component
In an embodiment an optoelectronic semiconductor component includes a lead frame having a first mounting surface, a semiconductor chip arranged on the first mounting surface and having an emission surface, an optical element and a molded body, wherein the optical element has an input-coupling surface oriented transverse to the first mounting surface, wherein the semiconductor chip is configured to emit electromagnetic radiation through the emission surface, a radiation axis of which is parallel to the first mounting surface, wherein the optical element is configured to deflect the electromagnetic radiation of the semiconductor chip coupled in via the input-coupling surface, wherein the molded body is attached to the lead frame and has an alignment surface transverse to the first mounting surface, and wherein the optical element and the alignment surface are in direct contact with each other.
Tunable Light Source
A tunable laser that is characterized by including a gain waveguide ACT made of an optically active semiconductor material, and a tunable wavelength filter TWF that selects light of a specific wavelength using current injection, which are integrated on a compound semiconductor substrate S, in which at least one or more of the tunable wavelength filters TWF are formed to select a specific wavelength of light from the light from the waveguide ACT and return the selected specific wavelength of light back to the waveguide ACT, and a semiconductor mixed crystal material constituting the tunable wavelength filter TWF has a strained multiple quantum well structure MQW in which a mixed crystal material ratio changes periodically.
Tunable Light Source
A tunable laser that is characterized by including a gain waveguide ACT made of an optically active semiconductor material, and a tunable wavelength filter TWF that selects light of a specific wavelength using current injection, which are integrated on a compound semiconductor substrate S, in which at least one or more of the tunable wavelength filters TWF are formed to select a specific wavelength of light from the light from the waveguide ACT and return the selected specific wavelength of light back to the waveguide ACT, and a semiconductor mixed crystal material constituting the tunable wavelength filter TWF has a strained multiple quantum well structure MQW in which a mixed crystal material ratio changes periodically.
Universal Laser for Polymeric Material Processing
Methods, systems, and apparatus, including medium-encoded computer program products, for a universal laser system including a laser operable to produce an infrared laser beam for a range of wavelengths, an optics assembly operable to focus and direct the laser beam, and electronics communicatively coupled with the laser and the optics assembly, the electronics being configured to control the laser and the optics assembly, where the laser is configured to produce the infrared laser beam at wavelengths in the range of wavelengths that overlap with absorption peaks due to higher-order, non-linear oscillations of molecular bonds of each polymeric material of at least ten different polymeric materials, thereby generating heat from absorption of photon energy from the infrared laser beam.
Universal Laser for Polymeric Material Processing
Methods, systems, and apparatus, including medium-encoded computer program products, for a universal laser system including a laser operable to produce an infrared laser beam for a range of wavelengths, an optics assembly operable to focus and direct the laser beam, and electronics communicatively coupled with the laser and the optics assembly, the electronics being configured to control the laser and the optics assembly, where the laser is configured to produce the infrared laser beam at wavelengths in the range of wavelengths that overlap with absorption peaks due to higher-order, non-linear oscillations of molecular bonds of each polymeric material of at least ten different polymeric materials, thereby generating heat from absorption of photon energy from the infrared laser beam.
DESIGNS FOR LATERAL CURRENT CONTROL IN OPTICAL AMPLIFIERS AND LASERS
An optical device is provided that includes an active waveguide having a top electrode and a plurality of layers including a gain layer. Configurations are disclosed for the active waveguide to enable amplification of a guided optical wave profile while preserving a shape of a lateral optical intensity profile of the guided optical wave as the guided optical wave is amplified along the waveguide. The top electrode and/or one or more layers of the active optical waveguide may be tailored to provide a tailored optical gain.
MULTIPLE OPTOELECTRONIC DEVICES WITH THERMAL COMPENSATION
An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.
MULTIPLE OPTOELECTRONIC DEVICES WITH THERMAL COMPENSATION
An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.
Transmitting unit and lidar device using at least two radiation sources having at least one of a settable operating temperature and a settable emission wavelength to generate and emit punctiform or linear electromagnetic beams for scanning a scanning range
A transmitting unit of a LIDAR device includes at least two radiation sources for generating and emitting punctiform or linear electromagnetic beams into a scanning range, at least one of the radiation sources including an operating temperature settable as a function of an emission angle of the electromagnetic beams generated by the at least one radiation source. The different operating temperatures can generate beams having angle-dependent emission wavelengths, which can result in an improvement of the signal-to-noise ratio of a LIDAR device.
Light emitting device
A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.