A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

Provided is a semiconductor device capable of easily reducing parasitic capacitance between wirings.

A semiconductor device according to the present disclosure includes a first substrate, a lower wiring provided on the first substrate, a plurality of upper wirings provided on the lower wiring via an insulation film, and a second substrate provided on the upper wirings via a plurality of elements, in which the upper wirings include a first wiring and a second wiring adjacent to each other in a first direction, the elements on the first wiring and the elements on the second wiring are connected in series to each other, and a first opening is provided in the lower wiring or provided so as to be sandwiched between the lower wirings in a second direction different from the first direction, or a second opening is provided in the upper wirings or provided so as to be sandwiched between the upper wirings in the second direction.

A light-emitting device includes: a plurality of semiconductor laser elements; a package having a hermetically sealed space, with the plurality of semiconductor laser elements arranged in the space; an optical member fixed to the package; and a plurality of adhesives including a first adhesive and a second adhesive fixing the optical member to the package. The plurality of adhesives are bonded to the optical member between an emission surface of the package and an incidence surface or a lower surface of the optical member. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to the incidence surface of the optical member than to an emission surface of the optical member.

A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element positioned on the main surface at a first reflective part side with respect to the first projection, the first laser element being configured to irradiate first laser light to the first reflective part; a second laser element positioned on the main surface at a second reflective part side with respect to the first projection, the second laser element being configured to irradiate second laser light to the second reflective part; and a first optical member bonded to the upper surface of the first projection.

According to aspects of the embodiments, there is provided an apparatus and method for driving a laser imaging module (LIM) that includes an adjustment current to have all laser diodes emitting the same amount of output so that the diodes can be connected in series on a single high current power source. Fine tuning can be done by a dedicated low current controllable power source connected directly to each laser diode. A series connected LIM uses only two heavy gauge wires so total power loss and heat stress on the LIM and module drawer connectors will be significantly reduced. Additional fine tuning can include an electronic gate so that individual diodes could be quickly turned off independently from each other.

A light emission device includes: a base part; a semiconductor laser device disposed on the base part; a frame body fixed to the base part and provided around the semiconductor laser device; a lid bonded to an upper surface of the frame body; and a first electrical conduction member bonded to an outer surface of the base part or an outer surface of the frame body, the first electrical conduction member having a first conductive region and a second conductive region that are electrically connected to the semiconductor laser device. In a top plan view, the first electrical conduction member includes a first portion overlapping the frame body and a second portion not overlapping the frame body, the first conductive region being contained in the first portion, and the second conductive region being contained in the second portion.

Laser diode packages include a rigid thermally conductive base member that includes a base member surface situated to support at least one laser diode assembly, at least one electrode standoff secured to the base member surface that has at least one electrical lead having a first end and a second end with the first end secured to a lead surface of the electrode standoff, and a lid member that includes a lid portion and a plurality of side portions extending from the lid portion and situated to be secured to the base member so as to define sides of the laser diode package, wherein at least one of the side portions includes a lead aperture situated to receive the second end of the secured electrical lead that is insertable through the lead aperture so that the lid member extends over the base member to enclose the laser diode package.

A light emission control device includes: a first light emission control circuit outputting a first control signal and a second control signal; and a second light emission control circuit outputting a third control signal and a fourth control signal. The first light emission control circuit controls a phase of the second control signal based on a first PWM signal in a first PWM dimming mode. The second light emission control circuit controls a phase of the fourth control signal based on a second PWM signal in a second PWM dimming mode. The second light emission control circuit outputs the fourth control signal having a phase different from that of the second control signal in a first analog dimming mode and a second analog dimming mode.

The control unit executes: a first execution step of executing a processing program to set a target value to a value defined by a processing program and performing feedback control on a driving current of a laser oscillator; a detection step of detecting an output fluctuation during execution of the first execution step; a specification step of specifying a physical quantity for which a measured value within a predetermined monitoring time before an occurrence timing of the output fluctuation does not satisfy a predetermined condition as an abnormal physical quantity from a plurality of physical quantities measured during execution of the first execution step; and a program update step of detecting appearance of a predetermined feature in an abnormal physical quantity as a fluctuation factor during execution of a post-update processing program, and updating the processing program to correct the driving current to reduce a difference between the laser output power and the target value compared with when the output fluctuation occurs in the first execution step after detection of the fluctuation factor.

A method of fabricating a Vertical Cavity Surface Emitting Laser(VCSEL) device includes providing a first structure comprising a VCSEL layer structure on a wafer. The first structure has a non-planar first structure top surface with varying height levels and includes one or more electrical contact areas. The method further includes applying one or more layers of cover material on the non-planar first structure top surface with a thickness such that a lowest height level of a cover material top surface is equal to or above the highest height level of the non-planar first structure top surface, to obtain a second structure having a second structure top surface, planarizing the second structure top surface, and producing one or more first electrical vias from the second structure top surface through the one or more layers of cover material for electrical connection to the one or more electrical contact areas.