A light emission device includes: a base part; one or more semiconductor laser devices disposed on an upper surface of the base part; a frame body having a flat region that is above the lower surface of the base part and outside a region in which the one or more semiconductor laser devices are disposed, the frame body having a throughhole that extends from an upper surface to a lower surface of the flat region; an electrical conduction member disposed on a lower surface side of the flat region, the electrical conduction member including on an upper surface thereof a first conductive region and an insulative region, such that the first conductive region and the insulative region are located in a region defined by the throughhole of the frame body in a top plan view; and wiring having an end that is bonded to the first conductive region.

A light emission system including a first sub-system. The first sub-system includes a storage inductor having a first inductor terminal coupled to a voltage source and a second inductor terminal; a storage capacitor having a first capacitor terminal coupled to the first terminal of the storage inductor, and a second capacitor terminal coupled to a reference voltage node; a switch having a control terminal coupled to a driver circuitry that sends a modulation signal to open or close the switch, a first channel terminal coupled to the second inductor terminal, and a second channel terminal coupled to the reference voltage node; and a load having N laser diodes coupled in series, where the N laser diodes include a first laser diode having a terminal coupled to the second inductor terminal, and an N-th laser diode having a terminal coupled to the reference voltage node.

A photonics device includes a silicon wafer including an upper surface region, a trench region, and a ridge structure. The ridge structure electrically isolates the upper surface region from the trench region. A laser diode chip flip-bonded onto the silicon wafer includes an electrode region bonded with the upper surface region, a gain region bonded with the trench region, and an isolation region bonded with the ridge structure. The isolation region electrically isolates the gain region from the electrode region. A conductor layer arranged between the silicon wafer and the laser diode chip includes a first section electrically connecting the gain region to a first electrode of the photonics device and a second section configured to electrically connect the electrode region to a second electrode of the photonics device. The first section is electrically isolated from the second section by the isolation region.

A light-emitting device includes first and second light-emitting elements, first and second support members bonded to the first and second light-emitting elements, respectively, first and second protective elements, and a plurality of wirings including: a first wiring with one end being bonded to the first light-emitting element or the first support member; a second wiring with one end being bonded to the first light-emitting element or the first support member and the other end being bonded to the second light-emitting element or the second support member; a third wiring with one end being bonded to the first protective element or a support member equipped with the first protective element; and a fourth wiring with one end being bonded to the second protective element or a support member equipped with the second protective element.

A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.

A light-emitting device includes a substrate; a lens array having a plurality of lens sections in a matrix pattern; and a plurality of semiconductor laser elements disposed on the substrate. Each of the semiconductor laser elements emits a respective laser beam, each laser beam having a beam shape with a greater width in a column direction than in a row direction on a light incident surface of each respective lens section. The lens sections have an inter-vertex distance in the row direction that is smaller than both (i) a maximum outer diameter of each of the lens sections, and (ii) an inter-vertex distance in the column direction. A curvature of the lens sections in the row direction is the same as a curvature of the lens sections in the column direction.

The present disclosure describes various linear VCSEL arrays, as well as VCSEL array chips incorporating such linear VCSEL arrays, and modules, host devices and other apparatus into which one or more of the linear VCSEL arrays are integrated. Implementations can include, for example, varying the aperture size of the VCSELs, tapering the shape of the transmission line, and/or changing the density of the VCSELs.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.