A high-efficiency laser pumping device is provided, wherein a dielectric with or without a tapered aperture is used to accept, guide, and concentrate a pump light toward a laser gain material. Preferably, the dielectric is also a heat insulator between the pump-light source and the laser gain material. The pump-light source includes an array of light-emitting diodes, or an array of laser diodes, or an array of mixed light-emitting-diodes and laser diodes. Preferably, the input and output faces of the dielectric are optically coated with dielectric layers to maximize the pump brightness toward the laser gain material. A high-efficiency laser-pumping system with active cooling apparatus is further provided, wherein a plural number of the optical-guiding and thermal-insulation dielectrics are arranged to receive the pump lights from a plural number of pump-light sources, configured to concentrate all the pump light toward a laser gain material.

A dummy bar is used to deposit an insulating film on a front end face (32) and a rear end face (34) of a laser diode bar (30), the dummy bar including a body part (12) having a plate shape, and including a pair of side surfaces (14), an upper surface (16), and a lower surface (18), the body part having a longitudinal length equal to a longitudinal length of the laser diode bar (30), the pair of side surfaces (14) being orthogonal to a longitudinal direction and opposite each other, the upper surface (16) and the lower surface (18) being orthogonal to the pair of side surfaces, parallel to a thickness direction of the plate shape, and opposite each other and a handle part (20) provided at a position separated from the lower surface (18) on each of the pair of side surfaces (14).

Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

A laser device is provided. The laser device includes a case, a plurality of light-emitting assemblies, an upper cover assembly and a stress-offsetting structure. The case includes a bottom plate and a frame body. The frame body is disposed on the bottom plate, and is enclosed on the bottom plate to form an accommodating space with an opening. The plurality of light-emitting assemblies is located in the accommodating space and are disposed on the bottom plate. The upper cover assembly is fixed to the case and covers the opening. The stress-offsetting structure is disposed in the frame body and/or in the upper cover assembly, and is configured to be contracted in a squeezing direction when the stress-offsetting structure is squeezed.

The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A disclosed semiconductor laser module includes a semiconductor laser device; a semiconductor optical amplifier configured to receive laser light emitted from the semiconductor laser device and amplify the laser light that has been received; and a first light receiving device that measures an intensity of a part of the laser light emitted from the semiconductor laser device, for monitoring a wavelength of the laser light, wherein the semiconductor optical amplifier is located rearward in relation to a light receiving surface of the first light receiving device along a propagation direction of the laser light emitted from the semiconductor device.

In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.