Apparatus include a plurality of laser diodes configured to emit respective laser diode beams having perpendicular fast and slow beam divergence axes mutually perpendicular to respective beam axes, and beam shaping optics configured to receive the laser diode beams and to circularize an ensemble image space and NA space of the laser diode beams at an ensemble coupling plane. In selected examples, beam shaping optics include variable fast axis telescopes configured to provide variable fast axis magnification and beam displacement.

The present technology relates to a lighting device, a method for controlling the lighting device, and a distance measurement module that make it possible to reduce a cyclic error.

The lighting device includes a plurality of light sources including a first light source and a second light source, and a drive unit that drives the plurality of light sources. The drive unit causes the first light source and the second light source to emit light at different timings and light emission periods to cause a light emission intensity by the plurality of light sources to have symmetry in a time direction in a time width of one cycle around a peak value or a minimum value. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

A photonic-device-mounting package has a base having plural mounting portions. Each of the plural mounting portions has a first mounting portion on which a light-emitting device is mounted and a second mounting portion on which an optical component is mounted, the second mounting portion being at a position in a light emission direction of the light-emitting device. The base has a first wall disposed between two mounting portions arranged next to one another in the light emission direction, the first wall having a height larger than the height of the first mounting portion.

Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

The invention relates to a method, an arrangement and an array, in which a structured contact layer and an elastic carrier layer arranged on a first side of the structured contact layer and connected to the structure contact layer by means of a bonded connection is produced, and in which at least one optoelectronic semiconductor component is arranged on the structured contact layer, on a second side of the structured contact layer, opposing the first side, and is electrically and mechanically connected to the structured contact layer, an elastic conversion layer in an irradiation region being applied to the structured contact layer and the elastic carrier layer in such a way that at least the optoelectronic semiconductor component is embedded in the conversion layer, at least in sections, and a connection region of the structure contact layer remains uncovered.

In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.

A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

A control system for frequency control of a laser module, comprising at least one laser module for generating laser radiation, at least one control device coupled or configured to couple to the laser module, and at least one optical resonator coupled or configured to couple to the control device, wherein the control device comprises a semiconductor substrate, a first Pound-Drever-Hall system arranged on the semiconductor substrate and at least one second Pound-Drever-Hall system arranged on the semiconductor substrate, wherein the laser module is coupled to the first Pound-Drever-Hall system of the control device and is configured to couple to the at least second Pound-Drever-Hall system of the control device, wherein the first Pound-Drever-Hall system is coupled to the optical resonator and wherein the second Pound-Drever-Hall system is configured to couple to the optical resonator, and wherein the number of Pound-Drever-Hall systems is greater than the number of laser modules or optical resonators.

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.