In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

According to one embodiment, a light source includes a plurality of light-emitting elements each including one or more surface-emitting lasers; and a plurality of detecting elements located on a same substrate as the light-emitting elements. The detecting elements individually detect quantities of output light of the light-emitting elements.

A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

A projector assembly includes three coaxially aligned lenses and an aperture stop. The three coaxially aligned lenses include a first lens and, in order of increasing distance therefrom and on a same side thereof, a second lens and a positive meniscus lens. The first lens is a positive lens. The second lens is a negative lens. The second lens is located between the aperture stop and the positive meniscus lens. The projector assembly is one-sided telecentric at a plane proximate the positive meniscus lens.

A light-emitting module includes a substrate, a first surface-emitting laser mounted on the substrate, the first surface-emitting laser having a first engaging portion protruded outward at an end, and a second surface-emitting laser mounted on the substrate, the second surface-emitting laser having a second engaging portion recessed inward at an end. The first surface-emitting laser and the second surface-emitting laser are adjacent to each other. The first engaging portion and the second engaging portion are engaged with each other.

An optical assembly comprising a busbar system comprising an electrically conductive first busbar conductively coupled to one or more electrically conductive mechanical fasteners and one or more vertical-cavity surface-emitting laser (VCSEL) array modules each comprising one or more electrically conductive contacts. Each VCSEL array module is releasably fastened to the busbar system by the one or more of the mechanical fasteners. When in a fastened position, the one or more mechanical fasteners are conductively coupled to the one or more electrically conductive contacts to provide an electrical connection between the first busbar and the one or more VCSEL array modules.

There are provided a surface emission laser 10, a surface emission laser array in which the surface emission laser 10 is arrayed two-dimensionally, and a surface emission laser manufacturing method that enable efficient injection of a current to an active layer 200b, while suppressing deterioration of the crystallinity of layers stacked above a contact area.

The present technology provides a surface emission laser 10 including a substrate 100, and a mesa structure 200 formed on the substrate 100, in which the mesa structure 200 includes at least a part of a first multilayer film reflector 200a stacked on the substrate 100, an active layer 200b stacked on the first multilayer film reflector 200a, and a second multilayer film reflector 200c stacked on the active layer 200b, and an impurity area 800 is provided over a contact area CA that is adjacent to the mesa structure 200, and contacts an electrode 600, and a side wall section of a portion of the mesa structure 200 which portion includes the first multilayer film reflector 200a.