There are provided a surface emission laser 10, a surface emission laser array in which the surface emission laser 10 is arrayed two-dimensionally, and a surface emission laser manufacturing method that enable efficient injection of a current to an active layer 200b, while suppressing deterioration of the crystallinity of layers stacked above a contact area.

The present technology provides a surface emission laser 10 including a substrate 100, and a mesa structure 200 formed on the substrate 100, in which the mesa structure 200 includes at least a part of a first multilayer film reflector 200a stacked on the substrate 100, an active layer 200b stacked on the first multilayer film reflector 200a, and a second multilayer film reflector 200c stacked on the active layer 200b, and an impurity area 800 is provided over a contact area CA that is adjacent to the mesa structure 200, and contacts an electrode 600, and a side wall section of a portion of the mesa structure 200 which portion includes the first multilayer film reflector 200a.

A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

Disclosed herein are single element dot pattern projectors with a meta-optics. The projectors include a laser light source and a metasurface chip integrated onto the laser light source. The metasurface chip includes metasurface elements spaced apart from the laser light source by a distance equal to the collimating function focal length of the metasurface chip. the laser light source produces light which is diffracted through the metasurface elements to produce a dot pattern. Projectors enabled by meta-optics lead to unique methods of integrating the meta-optic and unique functionality that can be added to the dot pattern.

A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.

An infrared illuminator including an infrared emitter and an infrared window for transmitting infrared radiation from the infrared emitter to a field of illumination. The infrared window includes an electrochromic material for varying the transmittance of the infrared radiation through the infrared window in response to an applied electric field.

A light emitting apparatus has light emitting units. The light emitting units can be respectively provided with current densities, so that the light emitted by each of the light emitting unit has a light intensity, wherein the current densities are different from each other, or partial of the current densities are different from each other. A number of the light emitting units can be larger than or equal to four, all of the four lighting frequencies of the four light emitting units are different from each other, or partial of the four lighting frequencies of the four light emitting units are identical to each other, and the light emitting apparatus and the object under test rotate relative to each other. A light emitting method, a spectrum detection method and a lighting correction method are also illustrated for increasing SNR, correcting the light intensity or the spectrum signal.

An array layout of VCSELs is intentionally mis-aligned with respect to the xy-plane of the device structure as defined by the crystallographic axes of the semiconductor material. The mis-alignment may take the form of skewing the emitter array with respect to the xy-plane, or rotating the emitter array. In either case, the layout pattern retains the desired, row/column structure (necessary for dicing the structure into one-dimensional arrays) while reducing the probability that an extended defect along a crystallographic plane will impact a large number of individual emitters.

Modification of the topology of selected regions of individual VCSEL devices during fabrication is utilized to provide an array output beam with specific characteristics (e.g., “uniform” output power across the array). These physical features include the width of the metal aperture, the width of the modal filter, and/or the geometry of the contact ring structure on the top of the VCSEL device. The modifications may also function to adjust the numerical apertures (NAs) of the devices, the beam waist, wallplug efficiency, and the like.