A light emitting device includes light emitting elements that are arranged on a front surface of a substrate and emit light, a first electrode that is connected to a first line controlling light emission of a light emitting element included in a first light emitting element group, and a second electrode that is connected to a second line controlling light emission of a light emitting element included in a second light emitting element group, in which the first line is provided through a space above the light emitting element of the second light emitting element group, and a position at which the first electrode is disposed with respect to a center of the light emitting element and a position at which the second electrode is disposed with respect to a center of the light emitting element are different from each other.

A semiconductor laser element includes a ridge, and includes: a p-type first clad layer; and a p-type second clad layer arranged on the p-type first clad layer, the p-type first clad layer has a superlattice structure of an Al.sub.xGa.sub.1-xN layer and an Al.sub.yGa.sub.1-yN layer (0≤x≤y≤1), the p-type second clad layer includes Al.sub.zGa.sub.1-zN (0≤z≤y), the p-type first clad layer includes: a flat portion on which the p-type second clad layer is not arranged; and a protruding portion which protrudes upward from the flat portion and on which the p-type second clad layer is arranged, and the height of the protruding portion protruding from the flat portion is less than the thickness of the p-type first clad layer in the flat portion.

A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion along a width direction of a semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the first portion has a first inclined surface inclined with respect to the side surface to go away from the side surface as going away from the semiconductor substrate, and a second inclined surface located opposite to the semiconductor substrate with respect to the first inclined surface and inclined with respect to a center line to approach the center line as going away from the semiconductor substrate. The metal layer extends over the first inclined surface and the second inclined surface.

The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.

Embodiments of the present invention include an apparatus for generating laser radiation with a semiconductor substrate, an intermediate layer arranged on the semiconductor substrate, and a Lateral Current Injection (LCI) laser arrangement arranged on the intermediate layer, wherein the intermediate layer includes a cavity extending at least under a laser strip of the LCI laser arrangement.

A device includes: a laminate including first and second regions adjacent to respective both sides of an isolation groove; a mesa stripe structure adjacent to the first region on the laminate and extending in the first direction; a bank structure adjacent to the second region on the laminate and extending in the first direction; and an electrode pattern. The isolation groove has an inner surface including a first wall surface adjacent to the first region, a second wall surface adjacent to the second region, and a bottom surface between the first and second regions. The ridge electrode extends from the side of the mesa stripe structure, along a second direction, toward the bank structure, and not beyond the second wall surface. The connection electrode is narrower in width in the first direction than any one of the ridge electrode and the pad electrode.

A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.

A semiconductor laser element includes: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type; and an active region disposed between the first nitride semiconductor layer and the second nitride semiconductor layer, the active region having a single quantum well structure. The active region comprises a first barrier layer, an intermediate layer, a well layer, and a second barrier layer, in this order in a direction from the first nitride semiconductor layer toward the second nitride semiconductor layer. The thickness of the first barrier layer is 20 nm or less. A lattice constant of the intermediate layer is greater than a lattice constant of each of the first barrier layer and the second barrier layer, and smaller than a lattice constant of the well layer. A thickness of the intermediate layer is greater than a thickness of the well layer.

A vertical cavity surface emitting laser includes a post provided at a major surface of a substrate and extending along a first axis intersecting the major surface of the substrate, and an electrode provided at an upper surface of the post and surrounding the first axis. The post includes a first distributed Bragg reflector, an active layer, a current confinement layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, the current confinement layer, and the second distributed Bragg reflector are disposed in order in a direction of the first axis.

Disclosed is a VCSEL array with improved optical properties. According to one aspect of the present embodiment, a VCSEL array has improved output light characteristics by minimizing the effects of resistance, inductance, and capacitance inevitably caused in a package.