Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

An oscillator disclosed herein includes an oscillation circuit including a negative resistance element, a voltage bias circuit applying voltage to the oscillation circuit. The oscillator further includes a switch provided in a path, in which the voltage bias circuit and the oscillation circuit are electrically coupled to each other, and implementing switching between a conductive state and a non-conductive state of the path, and a constant voltage element electrically coupled in parallel to the switch.

[Problem]

An object of the present invention is to provide a small-size high-power terahertz oscillator that achieves a stable oscillation in a terahertz frequency band even at a room temperature.

[Means for solving the problem]

The present invention is the high-power terahertz oscillator that has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator which includes two cavities is disposed at a power supply portion of the bow-tie antenna and a RTD is disposed along a bottom of a wall of the cavity resonator which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

[Problem]

An object of the present invention is to provide a small-size high-power terahertz oscillator that achieves a stable oscillation in a terahertz frequency band even at a room temperature.

[Means for solving the problem]

The present invention is the high-power terahertz oscillator that has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator which includes two cavities is disposed at a power supply portion of the bow-tie antenna and a RTD is disposed along a bottom of a wall of the cavity resonator which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

An integrated circuit includes a semiconductor substrate and a plurality of circuit elements in or on the substrate. The circuit elements are defined by standard layout cells selected from a cell library. The circuit elements including a plurality of flip-flops. Each flip-flop has a data input terminal, a data output terminal, a clock input terminal, and a clock output terminal. A first one of the flip-flops directly abuts a second flip-flop such that the clock output terminal of the first flip-flop electrically connects with the clock input terminal of the second flip-flop.

An oscillator comprising: a resonator including a negative resistance element; a voltage bias circuit configured to apply a voltage across the negative resistance element; and a first shunt element in which a resistor and a capacitor are electrically connected in series, wherein the negative resistance element and the first shunt element are electrically connected in parallel to the voltage bias circuit.

An oscillator comprising: a resonator including a negative resistance element; a voltage bias circuit configured to apply a voltage across the negative resistance element; and a first shunt element in which a resistor and a capacitor are electrically connected in series, wherein the negative resistance element and the first shunt element are electrically connected in parallel to the voltage bias circuit.